Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Ronald E. Leibenguth"'
Autor:
Werner Wegscheider, Ronald E. Leibenguth, Peter B. Littlewood, Loren Pfeiffer, M. Hagn, Marc M. Dignam, O. Narayan, Ken W. West
Publikováno v:
Solid-State Electronics. 40:1-6
Characteristics of GaAs AlGaAs quantum wire (QWR) lasers are studied for the first time under strong magnetic fields up to 12T. The QWR laser diodes have been fabricated by the molecular beam epitaxy technique, we call “cleaved edge overgrowth” (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d10f7a2693b75a8bcbe8ab7a5a9c7029
https://doi.org/10.1016/0038-1101(95)00203-0
https://doi.org/10.1016/0038-1101(95)00203-0
Autor:
Ken W. West, Werner Wegscheider, Robert Hull, Ronald E. Leibenguth, Loren Pfeiffer, Marc M. Dignam, Aron Pinczuk
Publikováno v:
Journal of Crystal Growth. 150:285-292
We have used the molecular beam growth technique which we call “cleaved edge overgrowth” to fabricate quantum wire lasers, in which 1D quantum confinement is entirely defined by the growth process. The active region of our lasers consists of atom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3929c3ba97c50dc2d651d6e62c26c9a5
https://doi.org/10.1016/0022-0248(95)80222-x
https://doi.org/10.1016/0022-0248(95)80222-x
Autor:
Gabby Sarusi, K. M. S. V. Bandara, Ronald E. Leibenguth, Barry F. Levine, J. Y. Andersson, Stephen J. Pearton
Publikováno v:
Journal of Applied Physics. 76:4989-4994
We have performed a detailed study of two‐dimensional grating coupling for quantum well infrared photodetectors in the very long wavelength spectral region λ∼16–17 μm. Using calculations based on the modal expansion method we quantitatively e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2ce50e1cd785133addea363eba233d3
https://doi.org/10.1063/1.357209
https://doi.org/10.1063/1.357209
Autor:
J. Cheng, Kevin L. Lear, Gregory A. Vawter, John C. Zolper, A.C. Adams, Ronald E. Leibenguth, Yin-Chen Lu, Bo Lu, J.L. Zilko, Ping Zhou, S.A. Chalmers
Publikováno v:
IEEE Photonics Technology Letters. 6:398-401
Optical switches based on GaAs/AlGaAs vertical-cavity surface-emitting lasers and heterojunction phototransistors are combined monolithically into new switching configurations that perform optical logic and spatial routing in a dynamically programmab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1944d20761adccb108e98bcd12cdb6f
https://doi.org/10.1109/68.275499
https://doi.org/10.1109/68.275499
Autor:
S.A. Chalmers, Gregory A. Vawter, Ping Zhou, Kevin L. Lear, John C. Zolper, Ronald E. Leibenguth, A.C. Adams, J. Cheng
Publikováno v:
IEEE Photonics Technology Letters. 5:1035-1038
We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac797e4434a1f5a14399383169f0d05a
https://doi.org/10.1109/68.257183
https://doi.org/10.1109/68.257183
Publikováno v:
Journal of Applied Physics. 74:1826-1831
We have performed an extensive series of measurements on symmetrical barrier bound‐to‐continuum and asymmetrical barrier bound‐to‐bound quantum well infrared photodetectors consisting of only a single well. We find that the behavior of the op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea29cfe8447c55335c85a1bc3f4bf81
https://doi.org/10.1063/1.354789
https://doi.org/10.1063/1.354789
Autor:
A.Y. Cho, Jay M. Wiesenfeld, J. D. Wynn, G. Hasnain, Yeong-Her Wang, Joseph S. Perino, Ronald E. Leibenguth
Publikováno v:
IEEE Journal of Quantum Electronics. 29:1996-2005
The authors have gain-switched GaAs vertical-cavity surface-emitting lasers (VCSELs) using sinusiodal electrical modulation at rates between 1.5 and 8 GHz and devices with operating wavelengths between 820 and 860 nm. The shortest pulse obtained dire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0eb459272b698fbbc8e5c9d9e5b2e8
https://doi.org/10.1109/3.234462
https://doi.org/10.1109/3.234462
Autor:
Joseph Michael Freund, L.M.F. Chirovsky, E.J. Laskowski, M.W. Focht, L. E. Smith, Ronald E. Leibenguth, Anthony L. Lentine, L.A. D'Asaro, Shin-Shem Pei, G. Guth, T.K. Woodward
Publikováno v:
IEEE Journal of Quantum Electronics. 29:670-677
The structure, processing, and performance of arrays of integrated field-effect transistor-self-electrooptic effects devices (FET-SEEDs) consisting of doped-channel field-effect transistors, multiple quantum-well (MQW) modulators, and p-i-n MQW detec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c03c59a216c83f1a7559b0f52801cd2
https://doi.org/10.1109/3.199321
https://doi.org/10.1109/3.199321
Autor:
Kent D. Choquette, Ronald E. Leibenguth, Minghwei Hong, Joseph Petrus Mannaerts, J. D. Wynn, G. Hasnain, Robert S. Freund, Robert C. Wetzel
Publikováno v:
IEEE Photonics Technology Letters. 4:951-954
The authors report on the fabrication of vertical-cavity surface-emitting lasers (VCSELs) using vacuum processing techniques. The upper monolithic distributed Bragg reflector around the laser cavity is dry etched down to the top of the active region,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8941800aac3759df0b66c11d3cc5299c
https://doi.org/10.1109/68.157112
https://doi.org/10.1109/68.157112
Autor:
Ronald E. Leibenguth, L.A. D'Asaro, Joseph Michael Freund, David A. B. Miller, L.M.F. Chirovsky, Rick L. Morrison, G.D. Guth, Frederick B. McCormick, F. A. P. Tooley, Anthony L. Lentine, Sonya L. Walker, L. E. Smith, M.W. Focht, G. J. Przybylek
Publikováno v:
IEEE Journal of Quantum Electronics. 28:1539-1553
Two-dimensional arrays of logic self-electrooptic effect devices (L-SEEDs), consisting of electrically connected quantum-well p-i-n diode detectors and modulators are demonstrated. The topology of the electrical connections between the detectors is e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b783b48e910975ed7ee6c8bf14c5e6
https://doi.org/10.1109/3.135308
https://doi.org/10.1109/3.135308