Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Ronald E. Enstrom"'
Publikováno v:
SPIE Proceedings.
The National Information Display Laboratory (NIDL) is chartered to ensure the most efficient and cost-effective transfer of display technologies to government applications. To assure high quality in displays acquired by the government, the NIDL condu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dda83fa16b0b263113ca7b9e5fd9882d
https://doi.org/10.1117/12.397764
https://doi.org/10.1117/12.397764
Autor:
Ronald E. Enstrom, Jacob M. Hammer, Gary A. Evans, J.R. Appert, E. A. Vangieson, A. Triano, James T. Andrews, Ramon U. Martinelli, N. W. Carlson, S. L. Palfrey, R. Stolzenberger
Publikováno v:
Applied Physics Letters. 59:2790-2792
We have demonstrated high‐power linear arrays of InGaAs/InGaAsP grating‐surface‐emitting lasers operating at a wavelength of 1.5 μm and emitting over 200 mW cw and 400 mW pulsed power. Arrays 1 cm in length exhibit coherent, mutual‐injection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ba6a28be9a0182cb03b83d1a3bb9647
https://doi.org/10.1063/1.105861
https://doi.org/10.1063/1.105861
Publikováno v:
Applied Physics Letters. 59:2127-2129
We have observed laser action at λ=3.06 μm in In0.77Ga0.23As0.74Sb0.26/InP0.7Sb0.3 double heterojunction, diode lasers, which were grown by organometallic vapor‐phase epitaxy. The maximum operating temperature was T=35 K, and typical threshold cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b770781836001075b0b9f8a202e1f00
https://doi.org/10.1063/1.106101
https://doi.org/10.1063/1.106101
Autor:
R. Stolzenberger, A. Triano, E. A. Vangieson, James T. Andrews, Ronald E. Enstrom, N. W. Carlson, J.R. Appert, Ramon U. Martinelli, S. L. Palfrey, Gary A. Evans, Jacob M. Hammer
Publikováno v:
Applied Physics Letters. 57:2753-2755
We have demonstrated linear and two‐dimensional arrays of grating‐surface‐emitting lasers operating at 1.5 μm. The gain sections are 400‐μm‐long InGaAs/InGaAsP multiple quantum well ridge‐guide diode lasers, connected by waveguide outpu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b858f5475a62ef5a356c638d7b8304c7
https://doi.org/10.1063/1.103777
https://doi.org/10.1063/1.103777
Publikováno v:
Laser Diode Technology and Applications IV.
We have observed laser action in InO7GaO3AsO72SbO28 IInPO.7SbO.3 double heterojunction, diode lasers at ? = 3.06 .tm. The maximum operating temperature was 35 K. The threshold current densities were in the range of 200 - 330 A /cm These devices were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4610fb9c07e4f97c9fba1fcdbd8d7a9b
https://doi.org/10.1117/12.59134
https://doi.org/10.1117/12.59134
Autor:
Ronald E. Enstrom, John R. Appert
Publikováno v:
Journal of Applied Physics. 43:1915-1923
The influence of incorporating elements from groups III, IV, V, and VI into vapor‐deposited Nb3Sn superconducting ribbon on the critical current density in magnetic fields up to 190 kOe has been examined, and the mechanism of the enhancement of Jc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d50f0bc0b63513595ea0404abbacbec
https://doi.org/10.1063/1.1661416
https://doi.org/10.1063/1.1661416
Autor:
Ronald E. Enstrom, John R. Appert
Publikováno v:
Journal of Applied Physics. 45:421-428
Nb3Sn alloyed with Si, Ti, V, Ta, Bi, or Mo has been grown from the vapor phase on stainless‐steel (Hastelloy) ribbon substrates. Compared to a value of 185 kOe observed for unalloyed Nb3Sn, 1.3% Si increased Hc2 to 225 kOe, while 0.002% Bi or 0.05
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b5125de8e70c51e5c3ff1a29a64788c
https://doi.org/10.1063/1.1662996
https://doi.org/10.1063/1.1662996
Autor:
Ramon U. Martinelli, Ronald E. Enstrom
Publikováno v:
Journal of Applied Physics. 63:250-252
Planar InP/In0.53Ga0.47As photodiodes with boro‐phospho‐silicate glass (BPSG) layers as a Zn‐diffusion mask and as an InP surface p‐n junction passivant exhibit stable, reverse‐bias leakage‐current characteristics at 220 °C for more than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8ef706fa7c23c41fba11ab64830c612
https://doi.org/10.1063/1.340454
https://doi.org/10.1063/1.340454
Autor:
Ronald E. Enstrom
Publikováno v:
Journal of Applied Physics. 37:4880-4882
The critical temperature of Nb6Sn5 is less than 2.8°K and the maximum critical field is less than 600 G at 2.1°K. Since NbSn2 also has a transition temperature below 4.2°K, Nb3Sn is the only compound in the Nb—Sn system that is superconducting a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec36474d5e0c892100d3d7fd1a42d264
https://doi.org/10.1063/1.1708155
https://doi.org/10.1063/1.1708155
Autor:
Ronald E. Enstrom, John R. Appert
Publikováno v:
Journal of Applied Physics. 43:4271-4271
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b944914999911bfa5e5520f4fa91699
https://doi.org/10.1063/1.1660916
https://doi.org/10.1063/1.1660916