Zobrazeno 1 - 10
of 708
pro vyhledávání: '"Ronald D. Schrimpf"'
Autor:
Kenneth F. Galloway, Arthur F. Witulski, Ronald D. Schrimpf, Andrew L. Sternberg, Dennis R. Ball, Arto Javanainen, Robert A. Reed, Brian D. Sierawski, Jean-Marie Lauenstein
Publikováno v:
Aerospace, Vol 5, Iss 3, p 67 (2018)
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower
Externí odkaz:
https://doaj.org/article/9fc7fe16c21a4bddb4f813b56c6aa0b8
Autor:
Mariia Gorchichko, En Xia Zhang, Mahmud Reaz, Kan Li, Peng Fei Wang, Jingchen Cao, Rachel M. Brewer, Ronald D. Schrimpf, Robert A. Reed, Brian D. Sierawski, Michael L. Alles, Jonathan Cox, Steven L. Moran, Subramanian S. Iyer, Daniel M. Fleetwood
Publikováno v:
IEEE Transactions on Electron Devices. 70:3215-3222
Autor:
Jaesung Lee, Michael W. McCurdy, Robert A. Reed, Ronald D. Schrimpf, Michael A. Alles, Philip X.-L. Feng
Publikováno v:
IEEE Transactions on Nuclear Science. 70:462-468
Autor:
Robert A. Johnson, Arthur F. Witulski, Brian D. Sierawski, Dennis R. Ball, Kenneth F. Galloway, Andrew L. Sternberg, Robert A. Reed, Ronald D. Schrimpf, Michael L. Alles, Jean-Marie Lauenstein, John M. Hutson
Publikováno v:
IEEE Transactions on Nuclear Science. 70:322-327
Autor:
Arijit Sengupta, Dennis R. Ball, Arthur F. Witulski, En Xia Zhang, Ronald D. Schrimpf, Kenneth F. Galloway, Robert A. Reed, Michael L. Alles, Michael W. McCurdy, Andrew L. Sternberg, Robert A. Johnson, Mick E. Howell, Jason M. Osheroff, John M. Hutson
Publikováno v:
IEEE Transactions on Nuclear Science. 70:394-400
Autor:
Kan Li, Xuyi Luo, M. W. Rony, Mariia Gorchichko, Gaspard Hiblot, Stefaan Van Huylenbroeck, Anne Jourdain, Michael L. Alles, Robert A. Reed, En Xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 70:442-448
Autor:
Jingchen Cao, Isabella Wynocker, En Xia Zhang, Robert A. Reed, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood, Antonio Arreghini, Maarten Rosmeulen, João P. Bastos, Geert Van den Bosch, Dimitri Linten
Publikováno v:
IEEE Transactions on Nuclear Science. 70:634-640
Autor:
Shintaro Toguchi, En Xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Stephane Moreau, Perrine Batude, Laurent Brunet, Francois Andrieu, Michael L. Alles
Publikováno v:
IEEE Transactions on Nuclear Science. 70:627-633
Autor:
Xuyi Luo, En Xia Zhang, Peng Fei Wang, Kan Li, Dimitri Linten, Jerome Mitard, Robert A. Reed, Daniel M. Fleetwood, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 23:153-161
Autor:
Kai Ni, Ronald D. Schrimpf, Daniel M. Fleetwood, enxia zhang, Hussam Amrouch, Vijaykrishnan Narayanan, santosh kurinec, xiao gong, sven beyer, steven soss, stefan duenkel, Halid Mulaosmanovic, Zubair Faris, munazza sayed, Xuyi Luo, Zixiang Guo, Zhouhang Jiang
In this work, a thorough assessment of the robustness of complementary channel HfO2 ferroelectric FET (FeFET) against total ionizing dose (TID) radiation is conducted, with the goal of determining its suitability for use as high-performance and energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::776c21ab63d0b82e6e7bac1b98f70a2c
https://doi.org/10.36227/techrxiv.22933937
https://doi.org/10.36227/techrxiv.22933937