Výsledky vyhledávání - "Ronald D. Remba"

Resonance Raman spectra of chloroperoxidase

Autor: Robert Chiang, P.M. Champion, Lowell P. Hager, Ronald D. Remba, D.B. Fitchen

Publikováno v: Biochimica et Biophysica Acta (BBA) - Protein Structure. 446:486-492

Resonant Raman spectra of native and reduced chloroperoxidase are presented and the principal features are tabulated. Comparisons are made with the spectra of other heme proteins. The correlation proposed for certain Raman “marker band” positions

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2163a86257992d423e0ecef75c6352a8
https://doi.org/10.1016/0005-2795(76)90015-5

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Resonance Raman studies of methemoglobin derivatives at room temperature and 77 K

Autor: Ronald D. Remba, K.C. Cho, D.B. Fitchen

Publikováno v: Biochimica et biophysica acta. 668(1)

Raman spectra in preresonance with the Soret absorption band are reported for the following methemoglobin derivatives: cyanide, cyanate, thiocyanate, hydroxy-, azide, and fluoride methemoglobin at 285 K and 77 K. For the mixed-spin derivatives, Raman

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cedab3492f7412dfabcd73bdcb3d84a
https://pubmed.ncbi.nlm.nih.gov/7236705

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Resonance Raman investigations of chloroperoxidase, horseradish peroxidase, and cytochrome c using Soret band laser excitation

Autor: Ronald D. Remba, Douglas B. Fitchen, Robert Chiang, Paul M. Champion, Lowell P. Hager

Publikováno v: Biochemistry. 18(11)

Resonance Raman spectra of the heme protein chloroperoxidase in its native and reduced forms and complexed with various small ions are obtained by using laser excitation in the Soret region (350-450 nm). Additionally, Raman spectra of horseradish per

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bea2a014342e3b5874fe4dc71e17bbe1
https://pubmed.ncbi.nlm.nih.gov/36129

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An Improved Technique For 1/4 Micrometer Gate Length Gaas Mesfet Fabrication By Optical Lithography

Autor: Ronald D. Remba, Brad D. Cantos

Publikováno v: SPIE Proceedings.

This paper describes an innovative photolithographic method for the fabrication of 1/4 micrometer gates in gallium arsenide Metal-Semiconductor Field Effect Transistors (GaAs MESFETs). The method utilizes image reversal technology, in which negative

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60761e20c21e1cb55990db054493a188
https://doi.org/10.1117/12.940354

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