Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Ronald A. Carpio"'
Publikováno v:
Microelectronic Engineering. 35:169-174
This paper describes the use of two step post-exposure-bakes for improving the lithographic performance of the chemically amplified resist, UVIIHS TM from the Shipley Company. With this process, post-exposure-baking at a low temperature allows the de
Publikováno v:
Journal of Photopolymer Science and Technology. 10:425-443
This paper will report post-exposure delay results using Shipley UVIBISTM deep UV resist. The variables of the experiments include: processing delays (expose to post-exposure-bake and coat to exposure), different levels of ammonia, different substrat
Publikováno v:
Thin Solid Films. 280:37-42
Specular X-ray reflectivity from SiO2 thin films prepared on silicon substrates by plasma-enhanced chemical vapor deposition showed the films to have a characteristic width of the decay in density at the free surface of 17 A, to be about three-quarte
Publikováno v:
Thin Solid Films. 266:238-244
Chemical mechanical polishing (CMP) of copper has been investigated with suspended silica and alumina abrasives using various slurry chemistries. The characteristics of these chemistries were studied by electrochemical d.c. polarization and a.c. impe
Autor:
Georgia K. Rich, Daniel Miller, John L. Sturtevant, Kim Dean, John S. Petersen, Ronald A. Carpio, Theodore H. Fedynyshyn, James W. Thackeray
Publikováno v:
Journal of Photopolymer Science and Technology. 8:571-597
Current efforts to reduce deep ultraviolet (DUV) photoresist profile abnormalities on silicon nitride (Si3N4) and titanium nitride (TiN) are summarized. The nitridic surface of the films is investigated to understand the mechanism that is responsible
Publikováno v:
Journal of Chromatography A. 657:185-191
Method development and applications of capillary electrophoresis to the analysis of cations in highest purity grades of hydrogen peroxide which are used for semiconductor processing are discussed. Indirect UV detection in conjunction with electromigr
Publikováno v:
Analytical Chemistry. 64:2123-2129
The application of the new technique of electrophoretic capillary ion analysis (CIA) to the analysis of borophosphosilicate thin films (BPSG) is described. CIA and ion chromatography (IC) were shown to produce equivalent analytical results for boron,
A new optical technique for monitoring wafer curvature and stress during copper damascene processing
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
Initial characterization of the damascene process was obtained with the new coherent gradient sensing (CGS) interferometer on 200 and 300 mm wafers. The current study represents an extension of earlier work by taking advantage of the greater spatial
Publikováno v:
SPIE Proceedings.
A special UV curing process which employs an ammonia blanketing gas was investigated to determine if a reduction in chemically amplified photoresist loss cold be attained in oxide, polysilicon, and metal plasma etch processes. In addition, a reductio
Publikováno v:
MRS Proceedings. 562
Copper electroplating has become the leading technology for gap fill of damascene structures on advanced interconnects. A key to developing a robust electroplating process that produces deposits free of voids and seams is understanding the role of th