Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Ronald A. Arif"'
Autor:
Ajit P. Paranjpe, Bumjoon Kim, Eric A. Armour, Drew Hanser, Bojan Mitrovic, Soo Min Lee, Terry Toh, Mark McKee, Ronald A. Arif
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXV.
Veeco MOCVD solutions are capable of supporting multiple substrates (GaAs, InP, sapphire, Si), and offer seamless transition to larger substrate sizes. For 6” GaAs red micro LED, Lumina® has demonstrated total population wavelength yield of >95% i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d386e9dd1918206ec73ef7ca91c6e21
https://doi.org/10.1117/12.2578842
https://doi.org/10.1117/12.2578842
Autor:
Ajit P. Paranjpe, Drew Hanser, Alex Zhang, Weimin Dong, Bojan Mitrovic, Mark McKee, Eric A. Armour, Ronald A. Arif
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXIV.
We’ve developed a next-generation MOCVD platform for high-performance, commercial VCSEL production. The tool is capable of achieving total population uniformity >95% yield in +/- 3nm bin on 6” GaAs. In addition, the tool is capable to go >300 run
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::296a9eb939384d57760a3ec58bf215f3
https://doi.org/10.1117/12.2544914
https://doi.org/10.1117/12.2544914
Publikováno v:
MRS Advances. 2:329-334
InAlN films and InAlN/GaN high electron mobility transistor (HEMT) structures were demonstrated on 150mm Si using Veeco’s Propel single wafer metal-organic chemical vapor deposition (MOCVD) system. Smooth surfaces with root mean square (rms) roughn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aa5576e5275f8289e9d399d8b321927
https://doi.org/10.1557/adv.2017.174
https://doi.org/10.1557/adv.2017.174
Autor:
Niels Posthuma, George D. Papasouliotis, Stefaan Decoutere, Yoga N. Saripalli, Ronald A. Arif, Jie Su, Dirk Wellekens
Publikováno v:
Journal of Electronic Materials. 45:6346-6354
We are reporting the growth of AlGaN based enhancement-mode high electron mobility transistors (HEMTs) on 200 mm silicon (111) substrates using a single wafer metalorganic chemical vapor deposition reactor. It is found that TMAl pre-dosing conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6723abcd7fe64bf3aa40282cec49ed1
https://doi.org/10.1007/s11664-016-5029-9
https://doi.org/10.1007/s11664-016-5029-9
Publikováno v:
physica status solidi (a). 213:856-860
We are reporting on the uniform growth of III-nitrides (AlN, GaN, and AlGaN layers) on 200 mm silicon substrates using Veeco's Propel rotating disk, single wafer vertical MOCVD reactor. The reactor is designed for homogeneous alkyl/hydride flow distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44614614524f0d83e4145daff908020
https://doi.org/10.1002/pssa.201532708
https://doi.org/10.1002/pssa.201532708
Publikováno v:
Journal of Display Technology. 9:212-225
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well (QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e21655def05d18388bede6467607e9
https://doi.org/10.1109/jdt.2013.2250252
https://doi.org/10.1109/jdt.2013.2250252
Autor:
Frank Ramos, Erkan A. Berkman, Ronald A. Arif, Soo Min Lee, Eric A. Armour, George D. Papasouliotis, Eric Tucker
Publikováno v:
SPIE Proceedings.
We report on green-emitting In0.18Ga0.82N/GaN multi-quantum well (MQW) structures over a variety of metalorganic chemical vapor deposition (MOCVD) growth conditions to examine the morphology, optical quality, and micron-scale emission properties. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d8a21912adc246d5b6c4dfe5a05acf
https://doi.org/10.1117/12.2213309
https://doi.org/10.1117/12.2213309
Publikováno v:
Solid-State Electronics. 54:1119-1124
Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport acro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11a54c29af1eba93d674b920bbe656c
https://doi.org/10.1016/j.sse.2010.05.019
https://doi.org/10.1016/j.sse.2010.05.019
Autor:
Hongping Zhao, Ronald A. Arif, Jonathan D. Poplawsky, Nelson Tansu, G. S. Huang, Guangyu Liu, Xiaohang Li, Volkmar Dierolf, S. Tafon Penn
Publikováno v:
IET Optoelectronics. 3:283-295
Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520–525 nm. Based on a self-consistent six-band k·p method, band structures of both two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f858802d8d659172d413551f532f866
https://doi.org/10.1049/iet-opt.2009.0050
https://doi.org/10.1049/iet-opt.2009.0050
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:1104-1114
Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light-emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band structure is based on a self-consistent 6-band kmiddotp formalism taking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::881bb091bf2081157c32ca4144c48fa4
https://doi.org/10.1109/jstqe.2009.2016576
https://doi.org/10.1109/jstqe.2009.2016576