Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ron T. Holm"'
Autor:
Charles R. Eddy, Nabil Bassim, Mark E. Twigg, Ron T. Holm, D. K. Gaskill, R.L. Henry, Michael A. Mastro
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflecta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ac64a319fb95d027e00c72a51d459d6
http://arxiv.org/abs/2009.01635
http://arxiv.org/abs/2009.01635
Autor:
Michael A. Mastro, Charles R. Eddy, Nabil Bassim, Mark E. Twigg, A. Rosenberg, Ron T. Holm, R.L. Henry
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb60bc53830accf62a439c16bb4eac60
Autor:
Michael A. Mastro, Chul Soo Kim, I. Vurgaftman, Jihyun Kim, J. D. Caldwell, Ron T. Holm, Mijin Kim, Jerry R. Meyer, Charles R. Eddy
Publikováno v:
Japanese Journal of Applied Physics. 47:7827-7830
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7716f4c151ab0082d575419f2b4fbd2f
https://doi.org/10.1143/jjap.47.7827
https://doi.org/10.1143/jjap.47.7827
Autor:
Charles R. Eddy, Jihyun Kim, Michael A. Mastro, Joona Bang, Sung Hyun Kim, Byung Jae Kim, Hyunjung Jung, Ron T. Holm, Hong Yeol Kim, Jennifer K. Hite
Publikováno v:
Thin Solid Films. 516:7744-7747
The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7224508196ae0e579ef7476885bb9c7
https://doi.org/10.1016/j.tsf.2008.05.046
https://doi.org/10.1016/j.tsf.2008.05.046
Publikováno v:
Advanced Materials. 20:115-118
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoreti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c433096fd97be997b7dcf86ae995fc18
https://doi.org/10.1002/adma.200701683
https://doi.org/10.1002/adma.200701683
Autor:
Charles R. Eddy, Kwan Young Lee, R. L. Henry, Fan Ren, Jihyun Kim, Michael A. Mastro, Stephen J. Pearton, Ron T. Holm, Travis J. Anderson, Joon Yeob Lee
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:2246
Laser drilling for through-via holes was performed with a Nd:YVO4 laser for an AlGaN∕GaN high electron mobility transistor (HEMT) structure on a SiC substrate. Current-voltage (I-V) characteristics, transconductance, and small signal characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba50b218b43912ae4e4d41a47f5d70da
https://doi.org/10.1116/1.2335435
https://doi.org/10.1116/1.2335435