Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Romo-Negreira A"'
Autor:
Marc Demand, Takahiro Shiozawa, Kathleen Nafus, Soichiro Okada, Yannick Feurprier, Luka Kljucar, Ainhoa Romo Negreira, Danilo De Simone, Arnaud Dauendorffer, Philippe Foubert, Hiroki Tadatomo, Yuya Kamei, Onitsuka Tomoya, Genjima Hisashi, Makoto Muramatsu, Noriaki Nagamine, Seiji Nagahara, Noriaki Oikawa, Satoru Shimura, Dinh Congque, Keisuke Yoshida, Shinichiro Kawakami
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
EUV (extreme ultraviolet) lithography is progressively being inserted in high volume manufacturing of semiconductors to keep up with node shrinkage. However, defectivity remains one big challenge to address in order to be able to exploit its full pot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4517dd998317cde099bfa2ee8b509c71
https://doi.org/10.1117/12.2600860
https://doi.org/10.1117/12.2600860
Autor:
Ke, Xiaoxing, Bals, Sara, Romo Negreira, Ainhoa, Hantschel, Thomas, Bender, Hugo, Van Tendeloo, Gustaaf
Publikováno v:
In Ultramicroscopy 2009 109(11):1353-1359
Autor:
Johan Meersschaut, Inge Vaesen, Juergen Boemmels, Yiting Sun, Ainhoa Romo Negreira, Mansour Moinpour, Thierry Conard, Herbert Struyf, Steven De Feyter, I. Hoflijk, Zsolt Tokei, Silvia Armini
Publikováno v:
Microelectronic Engineering. 167:32-36
For porous low-k film to be integrated into the next generation of interconnects, the pores need to be sealed against metal ions and barrier precursors. Self-assembled monolayers (SAMs) from organosilane precursor are spin coated onto 300mmk=2.2 low-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d1afba39d451484937d25f30333226
https://doi.org/10.1016/j.mee.2016.10.011
https://doi.org/10.1016/j.mee.2016.10.011
Autor:
Stefan De Gendt, Marc Heyns, Karen Maex, Ainhoa Romo-Negreira, Philippe M. Vereecken, Olivier Richard
Publikováno v:
Science of Advanced Materials. 1:86-92
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55213075991b8869b9353f813e0a7572
https://doi.org/10.1166/sam.2009.1012
https://doi.org/10.1166/sam.2009.1012
Autor:
Daire J. Cott, Stefan De Gendt, Stefano Riva Sanseverino, Ainhoa Romo Negreira, Philippe M. Vereecken, Claudia Santini
Publikováno v:
ECS Transactions. 18:845-850
Nickel catalyst nanoparticles acting as nucleating seeds for carbon nanotube (CNT) growth were selectively deposited on the sidewalls of titanium nitride (TiN) electrodes by electrochemical deposition (ECD) from a Ni2+ electrolyte solution. Horizonta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b389e2135f0eff0cab0b1f8c263c932
https://doi.org/10.1149/1.3096544
https://doi.org/10.1149/1.3096544
Publikováno v:
ECS Transactions. 2:409-416
The electrochemical nucleation and growth of nickel on silicon from NiNO3 solution has been studied based on the Scharifker and Hills model for nucleation and diffusion limited growth of 3D hemispherical islands. The analysis of the experimental tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f75335c943e16f87f364f8d423d794a
https://doi.org/10.1149/1.2408894
https://doi.org/10.1149/1.2408894
Autor:
Koichi Yatsuda, Shinichiro Kawakami, Mark Somervell, Toshikatsu Tobana, Benjamen M. Rathsack, Doni Parnell, Makoto Muramatsu, Seiji Nagahara, Ainhoa Romo Negreira, Makiko Dojun, Soichiro Okada, Etsuo Iijima, Tadatoshi Tomita, Hiroyuki Iwaki, Takashi Yamauchi, Takeo Nakano, Takahiro Kitano, Kathleen Nafus, Vinayak Rastogi, Fumiko Iwao, Takanori Nishi, Jean-Luc Peyre
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
Directed Self-Assembly (DSA) is being extensively evaluated for application in semiconductor process integration.1-7 Since 2011, the number of publications on DSA at SPIE has exploded from roughly 26 to well over 80, indicating the groundswell of int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c318fccc77119d31b1d67db788a0ca2d
https://doi.org/10.1117/12.2085776
https://doi.org/10.1117/12.2085776
Autor:
Stefano Riva Sanseverino, Daire J. Cott, Ainhoa Romo-Negreira, Bernard D. Capraro, Guido Groeseneken, Stefan De Gendt, Claudia Santini, Philippe M. Vereecken
Publikováno v:
Nanotechnology. 21(24)
A technique is proposed to grow horizontal carbon nanotubes (CNTs) bridging metal electrodes and to assess their electrical properties. A test structure was utilized that allows for selective electrochemical sidewall catalyst placement. The selectivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c56a7d51f4cbf1389c768c57c3e727e
https://pubmed.ncbi.nlm.nih.gov/20498525
https://pubmed.ncbi.nlm.nih.gov/20498525
Autor:
Mark Somervell, Kathleen Nafus, Takashi Yamauchi, Todd R. Younkin, Makoto Muramatsu, Roel Gronheid, A. Romo-Negreira, Steven Demuynck, Doni Parnell, T. Seo, Nadia Vandenbroeck, Shinichiro Kawakami, D. J. Guerrero
Publikováno v:
SPIE Proceedings.
An electrical test vehicle for fabricating direct self-assembly (DSA) sub-30 nm via interconnects has been fabricated employing a soft mask grapho-epitaxy contact-hole shrink. The generation of the resist pre-pattern was carried out using 193i lithog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c868110878a23fb02657a4d513c59f60
https://doi.org/10.1117/12.2046119
https://doi.org/10.1117/12.2046119
Autor:
Doni Parnell, Etsuo Iijima, Seiji Nagahara, Tadatoshi Tomita, Shinchiro Kawakami, Mark Somervell, Makiko Dojun, Takanori Nishi, Ainhoa Romo Negreira, Jean-Luc Peyre, Takeo Nakano, Koichi Yatsuda, Kathleen Nafus, Hiroyuki Iwaki, Mariko Ozawa, Takahiro Kitano, Takashi Yamauchi, Soichiro Okada, Takumi Ishiguro, Toshikatsu Tobana, Makoto Muramatsu, Benjamen M. Rathsack
Publikováno v:
SPIE Proceedings.
Directed Self-Assembly (DSA) is one of the most promising technologies for scaling feature sizes to 16 nm and below. Both line/space and hole patterns can be created with various block copolymer morphologies, and these materials allow for molecular-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea497ba427a444498027ca7b927d7d1
https://doi.org/10.1117/12.2045975
https://doi.org/10.1117/12.2045975