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pro vyhledávání: '"Romero, Amy"'
Autor:
Romero, Amy Marie
Wide-bandgap semiconductors have made and are continuing to make a major impact on the power electronics world. The most common commercially available wide-bandgap semiconductors for power electronics applications are SiC and GaN devices. This paper
Externí odkaz:
http://hdl.handle.net/10919/93744
Publikováno v:
IEEE Power Electronics Magazine; 2017, Vol. 4 Issue: 2 p36-45, 10p
Autor:
Romero, Amy, Dimarino, Christina
Publikováno v:
IEEE Power Electronics Magazine; 2017, Vol. 4 Issue: 2 p97-101, 5p
Autor:
Zoller, Stacey, Nelson, Renée, Wallace, Kimberly, Hegstad, Christine D., Bray, Brittney, Scott, Michele C., La Rosa, Courtney, Pisano, Theresa, Romero, Amy, Eldridge, Heather, Caterina, Kelly, Waite, Karen, Miller, Shelley, Linnell, Kim M., Adams, Bethany, Hernandez, Hilary
Publikováno v:
Parents; Feb2008, Vol. 83 Issue 2, p168-171, 3p, 8 Color Photographs
Autor:
Romero, Amy, Hearrean, Ella, Latham, Rachel, Rawlings, Kelly, White, Lisa, Holder, Ginger, Silva, Katrina, Schwartz, Susan, Tokajer, Erin C., Reding, Sara, Pehrson, Shelly, Rogers, Mandy Stark, LaValley, Nicky, Qualkenbush, Rochelle, Thompson, Kim, Garrett, Lisa R.
Publikováno v:
Parents; Aug2007, Vol. 82 Issue 8, p222-224, 2p, 8 Black and White Photographs