Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Romandic, I."'
Publikováno v:
Applied Physics-A 98, 423(2010)
The surface of a single crystal Germanium wafer was transformed to crystals of germanium fluorides and oxides upon exposure to a vapor of HF and HNO3 chemical mixture. Structure analysis indicate that the transformation results in a germanate polycry
Externí odkaz:
http://arxiv.org/abs/1512.08001
Publikováno v:
Thin Solid Films 518, 2377(2010)
Optical properties of dislocations free state-of-the-art Germanium(Ge) and Germanium-oninsulator(GeOI) wafers have been characterized using Fourier transformed infrared spectroscopy at oblique incidence, attenuated total reflectance, laser Raman scat
Externí odkaz:
http://arxiv.org/abs/1512.08005
Publikováno v:
In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):4529-4532
Publikováno v:
In Materials Science in Semiconductor Processing 2008 11(5):328-331
Publikováno v:
In Physica B: Physics of Condensed Matter 2007 401:222-225
Autor:
Śpiewak, P., Sueoka, K., Vanhellemont, J., Kurzydłowski, K.J., Młynarczyk, K., Wabiński, P., Romandic, I.
Publikováno v:
In Physica B: Physics of Condensed Matter 2007 401:205-209
Autor:
Śpiewak, P., Muzyk, M., Kurzydłowski, K.J., Vanhellemont, J., Młynarczyk, K., Wabiński, P., Romandic, I.
Publikováno v:
In Journal of Crystal Growth 2007 303(1):12-17
Publikováno v:
In Materials Science in Semiconductor Processing 2006 9(4):753-758
Autor:
Śpiewak, P., Kurzydłowski, K.J., Vanhellemont, J., Clauws, P., Wabiński, P., Młynarczyk, K., Romandic, I., Theuwis, A.
Publikováno v:
In Materials Science in Semiconductor Processing 2006 9(4):465-470
Autor:
Lauwaert, J., Hens, S., Śpiewak, P., Wauters, D., Poelman, D., Romandic, I., Clauws, P., Vanhellemont, J.
Publikováno v:
In Physica B: Physics of Condensed Matter 2006 376:257-261