Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Roman Yu. Kozlov"'
Autor:
Elena N. Abramova, Roman Yu. Kozlov, Anatoliy I. Khokhlov, Yuriy V. Syrov, Yuriy N. Parkhomenko
Publikováno v:
Конденсированные среды и межфазные границы, Vol 26, Iss 1 (2024)
Modern electronic and optical engineering uses А3В5 single-crystal semiconductor materials (GaAs, GaSb, InAs, InSb, and InP) as substrates for epitaxial growth. These materials are obtained in the form of massive single-crystal ingots. Therefore, t
Externí odkaz:
https://doaj.org/article/748f52e95dce46bda70c3fef048843b9
Autor:
Yuri N. Parkhomenko, Aleksandr G. Belov, Elena V. Molodtsova, Roman Yu. Kozlov, Svetlana S. Kormilitsina, Eugene O. Zhuravlev
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 4, Pp 165-171 (2022)
The concentrations of conduction electrons in n-GaSb at 295 and 77 K have been calculated taking into account the non-parabolic deviation of the conduction band shape. We show that at T = 295 K the concentration of heavy electrons in the L-valley of
Externí odkaz:
https://doaj.org/article/751bf4f187544ba5a271c72f77da3ae3
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 2, Pp 73-78 (2021)
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According to literary data the diameter of 3–5 semiconductor single crystals grown nowadays is 4 to 6 inches.
Externí odkaz:
https://doaj.org/article/101f3ebc0ecb45bc8621c949723eb041
Autor:
Svetlana S. Kormilitsina, Elena V. Molodtsova, Stanislav N. Knyzev, Roman Yu. Kozlov, Dmitry A. Zavrazhin, Elena V. Zharikova, Yuri V. Syrov
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment
Externí odkaz:
https://doaj.org/article/67bf523b36b24853a97193a5a8f0976d
Autor:
Dmitry A. Zavrazhin, Yuri V. Syrov, Elena V. Zharikova, Svetlana S. Kormilitsina, Roman Yu. Kozlov, Stanislav N. Knyzev, Elena V. Molodtsova
Publikováno v:
Modern Electronic Materials 6(4): 147-153
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Modern Electronic Materials, Vol 6, Iss 4, Pp 147-153 (2020)
Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17a6f7de116e11759302171d3404778f
https://doi.org/10.3897/j.moem.6.4.64991
https://doi.org/10.3897/j.moem.6.4.64991