Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Roman Vitushinsky"'
Autor:
Devrez Mehmet Karabacak, Michiel Blauw, Zeng Zeng, Mercedes Crego Calama, Rob van Schaijk, Van Anh T. Dam, Roman Vitushinsky, R. J. M. Vullers, Sywert Brongersma, Marcel A. G. Zevenbergen
Publikováno v:
physica status solidi c. 11:46-49
Western societies all see their healthcare costs outpace GDP growth. To reverse this trend, several public and private initiatives were taken in the last years to make healthcare more cost efficient. It is anticipated that micro and nano-system techn
Autor:
Roman Vitushinsky, Peter Offermans
Publikováno v:
IEEE Sensors Journal. 13:2823-2827
Low-ppb room temperature NO2 detection is demonstrated using recessed AlGaN/GaN heterostructures fabricated on silicon substrates. We employ the 2-D electron gas (2DEG) formed at the interface of the AlGaN/GaN heterostructure for the monitoring of lo
Publikováno v:
25th Eurosensors Conference, 4 September 2011 through 7 September 2011, Athens, 25, 1417-1420
AlGaN/GaN shows great promise as a generic platform for (bio-)chemical sensing because of its robustness and intrinsic sensitivity to surface charge or dipoles. Here, we employ the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/
Publikováno v:
Journal of Microelectromechanical Systems. 18:186-194
Bistable shape memory actuators were fabricated by microsystem technology processes and characterized with regard to their use in tactile graphic displays. The actuators were realized as sputter-deposited buckled metallic thin-film carriers, having s
Publikováno v:
International Journal of Applied Electromagnetics and Mechanics
A new mechanism to switch thin film actuators between two stable states has been developed. Bistable membrane switches can be realized by snap-dome shaped metallic foils which are coated on opposite surfaces with Ti(Ni,Cu) and (Ti,Hf)Ni respectively
Publikováno v:
2012 IEEE Sensors.
Low-ppb room temperature NO 2 detection is demonstrated for the first time using ultra-thin AlGaN/GaN heterostructures fabricated on silicon substrates. AlGaN/GaN shows great promise as a generic platform for (bio-)chemical sensing because of its rob
Publikováno v:
Applied Physics Letters. 102:172101
Recessing of the open gate region of AlGaN/GaN heterostructures is shown to dramatically enhance the sensitivity of these devices to surface interactions. This is demonstrated by NO2 exposure under humid conditions. NO2 adsorption at the open gate re
Publikováno v:
Journal of The Electrochemical Society. 151:E226
The paper reports on the deposition of iridium oxide thin films by dc reactive magnetron sputtering and their characterization by surface analysis methods (X-ray diffraction, scanning electron microscopy, atomic force microscopy, and X-ray photoelect