Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Roman Redko"'
Autor:
Yurii Lyaschuk, Ivan Indutnyi, Viktor Myn’ko, Volodymyr Romanyuk, Iryna Mamontova, Roman Redko, Mykhailo Dusheyko, Yelizaveta Savchuk, Vasyl Tochkovyi, Oleksandr Shtykalo, Daria Kuznetsova, Sergii Mamykin
Publikováno v:
Applied Sciences, Vol 14, Iss 11, p 4546 (2024)
Plasmonic sensors have great potential for widespread usage. However, the prohibitive cost of noble metals restrains the wider adoption of these devices. The aim of our study is to develop a cost-effective Al-based alternative to common noble metal-b
Externí odkaz:
https://doaj.org/article/2ada340dfc2f44ec9ed9bb8232707a4e
Publikováno v:
Materials Research Express, Vol 11, Iss 10, p 105012 (2024)
A novel magnetic field induced phenomenon in ZnO/Ag nanoparticles is detected and investigated with reference to the surface plasmon resonance (SPR) effect. A shift of the maximum of plasmon absorption of the ZnO/Ag nanoparticles formed in different
Externí odkaz:
https://doaj.org/article/f54f20815b9344e4aa32c6417b5cc197
Publikováno v:
PIRETC-Proceeding of The International Research Education & Training Centre. 23:87-93
The influence of microwave radiation (MR) (2.45 GHz), weak magnetic field (WMF) (60 mT) and electron radiation (ER) (4 MeV) treatments on processes of defects reorganization in near-surface layers of GaN:Si have been studied. Long-term processes of p
Autor:
Roman Redko, Grigorii Milenin, Viktor Milenin, Raisa Konakova, Svitlana Redko, Petro Lytvyn, Olga Babenko
Publikováno v:
Materials Research Express; Mar2019, Vol. 6 Issue 3, p1-1, 1p
Publikováno v:
Scopus-Elsevier
Radioelectronics and Communications Systems; Том 49, № 9 (2006): Military Radioelectronic Technologies; 54-56
Radioelectronics and Communications Systems; Том 49, № 9 (2006): ; 54-56
Radioelectronics and Communications Systems; Том 49, № 9 (2006): Military Radioelectronic Technologies; 54-56
Radioelectronics and Communications Systems; Том 49, № 9 (2006): ; 54-56
The paper considers the impact of powerful short-term microwave radiation (f= 2.45 GHz) on the defect states of GaAs monocrystals by investigating the luminescence spectra in a domain of 0.6–2.5 μm at 77 K. It has been found experimentally that mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7ab1e8e2928c945fc937b020696d04d5
http://www.scopus.com/inward/record.url?eid=2-s2.0-85021310179&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85021310179&partnerID=MN8TOARS