Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Roman Petres"'
Autor:
D. Borchert, R. Ferre, Joris Libal, P. Fath, Thomas Buck, Radovan Kopecek, Roman Petres, M. Vetter, Isidro Martín
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
We present further results of a surface passivation study of p+-Si emitters by both intrinsic and boron-doped amorphous SiCx films, deposited in two different standard PECVD reactors. For comparison, thermally grown SiO2 and PECVD-SiN x layers with r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d68b543911218478ba7baeae3c22807
https://doi.org/10.1109/wcpec.2006.279290
https://doi.org/10.1109/wcpec.2006.279290
Autor:
I. Rover, Peter Fath, L.J. Geerligs, Eckard Wefringhaus, K. Peter, Thomas Buck, Radovan Kopecek, Joris Libal, K. Wambach, Roman Petres
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
In this paper we present n-type Si solar cells on large area mc-Si wafers with a boron diffused emitter at the front side. The focus of our studies is mainly related to the front surface of the solar cell. We have optimised BBr3-diffusion and in-situ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c49a01537efc8aa1938b9cc0f47acf21
https://doi.org/10.1109/wcpec.2006.279323
https://doi.org/10.1109/wcpec.2006.279323
Autor:
Radovan Kopecek, Jayaprasad Arumughan, Roman Petres, Simona Binetti, Sara Novaglia, Aleksander Prokopenko, Joris Libal, Maurizio Acciarri
Publikováno v:
Journal of Applied Physics. 104:104507
In this work we present a study of a p-type Czochralski-grown Si ingot which was grown using 10% solar grade silicon (SoG-Si). As the SoG-Si contains a relatively high concentration of impurities including phosphorus, the electrical properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c21b83806b092398408f0104f972fb66
https://doi.org/10.1063/1.3021300
https://doi.org/10.1063/1.3021300
Autor:
Radovan Kopecek, Tim Boescke, Roman Petres, Alexandre Savtchouk, Marshall Wilson, Valentin D. Mihailetchi, Atilla Toth, Jacek Lagowski, Ferenc Korsos
Publikováno v:
Energy Procedia. :71-77
We report a comprehensive noncontact approach to measurement of the field-effect passivation of emitters for p and n-type base silicon solar cells. The corona charge-voltage technique, extensively used in silicon IC fabrication lines, is utilized in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::229c231dd2984626db70574c88cb5537
Publikováno v:
Scopus-Elsevier
A simplified laboratory process with one photolithographic step for front junction solar cells on n-type multicrystalline (mc) silicon has been developed. The emitter diffusion is done in an open tube furnace with BBr/sub 3/ and back-surface-field di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b96a9fa6b5bc3d2de761a82e8825a94
http://www.scopus.com/inward/record.url?eid=2-s2.0-27944466819&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-27944466819&partnerID=MN8TOARS
