Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Roman Kozlowski"'
Autor:
Marcin Zajac, Paweł Kaminski, Roman Kozlowski, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Karolina Grabianska, Robert Kucharski, Rafal Jakiela
Publikováno v:
Materials, Vol 17, Iss 5, p 1160 (2024)
The formation of intrinsic point defects in the N-sublattice of semi-insulating Mg-doped GaN crystals grown by the ammonothermal method (SI AT GaN:Mg) was investigated for the first time. The grown-in defects produced by the displacement of nitrogen
Externí odkaz:
https://doaj.org/article/6acc24ef610141f995337aeba4e634cd
Autor:
Marek Suproniuk, Karol Piwowarski, Bogdan Perka, Pawel Kaminski, Roman Kozlowski, Marian Teodorczyk
Publikováno v:
Elektronika ir Elektrotechnika, Vol 25, Iss 4, Pp 36-39 (2019)
This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the
Externí odkaz:
https://doaj.org/article/f2fc2207c2de482c840aa1a53db4791f
Autor:
Dariusz Czolak, Pawel Kaminski, Jaroslaw Gaca, Michal Kozubal, Krystyna Przyborowska, Paweł Piotr Michałowski, A. Dobrowolski, Maciej J. Szary, Tymoteusz Ciuk, Marek Wojcik, Wawrzyniec Kaszub, Adrianna Chamryga, Beata Stanczyk, Roman Kozlowski, J. Jagiełło, Kinga Kosciewicz
Publikováno v:
Current Applied Physics. 27:17-24
In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basa
Autor:
Paweł Piotr Michałowski, Tymoteusz Ciuk, Pawel Kaminski, Anna Harmasz, Janusz Płocharski, Rafał Budzich, Roman Kozlowski, Jaroslaw Gaca
Publikováno v:
Journal of Materials Chemistry C. 9:4393-4404
State-of-the-art secondary ion mass spectrometry (SIMS), X-ray reflectivity (XRR) and atomic force microscopy (AFM) have been used to determine the effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric
Autor:
Paweł Kamiński, Andrzej Turos, Roman Kozłowski, Kamila Stefańska-Skrobas, Jarosław Żelazko, Ewa Grzanka
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract The properties and concentrations of deep-level defects induced by implantations of Si and Mg ions into unintentionally doped (UID) epitaxial GaN have been revealed by using the Laplace-transform photoinduced transient spectroscopy (LPITS) a
Externí odkaz:
https://doaj.org/article/73a7eef77260460393b77239bacc4ceb
Publikováno v:
Heritage Science, Vol 12, Iss 1, Pp 1-12 (2024)
Abstract Mechanical properties—modulus of elasticity and strain at break, water vapour sorption, and hygroscopic expansion of selected egg tempera and distemper paints were determined as a function of relative humidity (RH) filling in this way a cr
Externí odkaz:
https://doaj.org/article/d20f5992c4d9485e92aaad520f21f727
Autor:
Karol Piwowarski, M. Suproniuk, Pawel Kaminski, Bogdan Perka, Marian Teodorczyk, Roman Kozlowski
Publikováno v:
Elektronika ir Elektrotechnika, Vol 25, Iss 4, Pp 36-39 (2019)
This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the
High-Temperature Hall Effect Sensor Based on Epitaxial Graphene on High-Purity Semiinsulating 4H-SiC
Autor:
Dariusz Czolak, A. Dobrowolski, Michal Kozubal, Wawrzyniec Kaszub, Pawel Kaminski, Beata Stanczyk, J. Jagiełło, Tymoteusz Ciuk, Roman Kozlowski, Krystyna Przyborowska
Publikováno v:
IEEE Transactions on Electron Devices
In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) on-axis 4H-SiC(0001) substrate in a chemical vapor deposition proc
Autor:
Marian Teodorczyk, Marek Suproniuk, Pawel Kaminski, Karol Piwowarski, Roman Kozlowski, Bogdan Perka
Publikováno v:
Radioelectronic Systems Conference 2019.
Publikováno v:
Opto-Electronics Review. 25:171-180
In this paper we present the current status of modelling the time evolution of the transient conductivity of photoexcited semi-insulating (SI) 4H–SiC taking into account the properties of defect centres. A comprehensive model that includes the pres