Zobrazeno 1 - 10
of 212
pro vyhledávání: '"Roman Kozlowski"'
Autor:
Rose, Kenneth D.
Publikováno v:
Journal of Paleontology, 1978 Jan 01. 52(1), 214-217.
Externí odkaz:
https://www.jstor.org/stable/1303816
Autor:
Marcin Zajac, Paweł Kaminski, Roman Kozlowski, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Karolina Grabianska, Robert Kucharski, Rafal Jakiela
Publikováno v:
Materials, Vol 17, Iss 5, p 1160 (2024)
The formation of intrinsic point defects in the N-sublattice of semi-insulating Mg-doped GaN crystals grown by the ammonothermal method (SI AT GaN:Mg) was investigated for the first time. The grown-in defects produced by the displacement of nitrogen
Externí odkaz:
https://doaj.org/article/6acc24ef610141f995337aeba4e634cd
Akademický článek
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Autor:
Marek Suproniuk, Karol Piwowarski, Bogdan Perka, Pawel Kaminski, Roman Kozlowski, Marian Teodorczyk
Publikováno v:
Elektronika ir Elektrotechnika, Vol 25, Iss 4, Pp 36-39 (2019)
This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the
Externí odkaz:
https://doaj.org/article/f2fc2207c2de482c840aa1a53db4791f
Autor:
B. S. Sokolov
Publikováno v:
International Geology Review. 7:1616-1621
The distinguished career of the founder and director emeritus of the Institute of Paleozoology, Warsaw University, is summarized. As a young man he worked in South America (mainly Bolivia); the remainder of his career has been associated with Poland,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e88c6d259dbf374a8a3ec3cd3836f9
https://doi.org/10.1080/00206816509474213
https://doi.org/10.1080/00206816509474213
Autor:
null O. M. B. B.
Publikováno v:
Geological Magazine. 86:329-332
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8823a04cb2a7ec1159c5f507078a3fa
https://doi.org/10.1017/s0016756800075221
https://doi.org/10.1017/s0016756800075221
Publikováno v:
Acta Palaeontologica Polonica; 1977, Vol. 22 Issue 2, preceding p116-116, 4p
Autor:
Dariusz Czolak, Pawel Kaminski, Jaroslaw Gaca, Michal Kozubal, Krystyna Przyborowska, Paweł Piotr Michałowski, A. Dobrowolski, Maciej J. Szary, Tymoteusz Ciuk, Marek Wojcik, Wawrzyniec Kaszub, Adrianna Chamryga, Beata Stanczyk, Roman Kozlowski, J. Jagiełło, Kinga Kosciewicz
Publikováno v:
Current Applied Physics. 27:17-24
In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::423d9b151de231fb39822d65b27abd37
https://doi.org/10.1016/j.cap.2021.03.021
https://doi.org/10.1016/j.cap.2021.03.021
Autor:
Paweł Piotr Michałowski, Tymoteusz Ciuk, Pawel Kaminski, Anna Harmasz, Janusz Płocharski, Rafał Budzich, Roman Kozlowski, Jaroslaw Gaca
Publikováno v:
Journal of Materials Chemistry C. 9:4393-4404
State-of-the-art secondary ion mass spectrometry (SIMS), X-ray reflectivity (XRR) and atomic force microscopy (AFM) have been used to determine the effect of oxidation temperature on the inhomogeneity of chemical composition and density in nanometric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d564d05661979568330fcd9a31fda88c
https://doi.org/10.1039/d0tc05988a
https://doi.org/10.1039/d0tc05988a
Autor:
Karol Piwowarski, M. Suproniuk, Pawel Kaminski, Bogdan Perka, Marian Teodorczyk, Roman Kozlowski
Publikováno v:
Elektronika ir Elektrotechnika, Vol 25, Iss 4, Pp 36-39 (2019)
This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19de5cb02da80e0242835f6ca75f79b6
https://doi.org/10.5755/j01.eie.25.4.23968
https://doi.org/10.5755/j01.eie.25.4.23968