Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Roman Kondratyuk"'
Autor:
Yeon-Gon Mo, Denis Stryakhilev, Mu-gyeom Kim, Hui-Won Yang, Roman Kondratyuk, Chaun Gi Choi, Sang-soo Kim, Ki-Ju Im, Hye-Dong Kim, Hye-Hyang Park
Publikováno v:
IEEE Electron Device Letters. 32:503-505
We extracted the effective channel length and parasitic series resistance in a-IGZO inverted-staggered etch-stop (ES) TFTs. When there is an overlap between the drain or source electrode and the FET channel, the resistance of the channel underneath t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2bcc635b23395301220841e0a123a64
https://doi.org/10.1109/led.2011.2104937
https://doi.org/10.1109/led.2011.2104937
