Zobrazeno 1 - 10
of 278
pro vyhledávání: '"Roman Grill"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 25, Iss 2, Pp 352-361 (2024)
High-temperature (470-1170 K) properties of CdTe:P single crystals, grown by Bridgman technique, with an initial concentration of impurities in the melt 1×1019 at/cm3, were investigated by measuring of the Hall effect. Experimental results indicate
Externí odkaz:
https://doaj.org/article/ab6dff5043ab4da184a72b2ae2a32807
Autor:
Valentina Vicini, Silvia Zanettini, Nicola Sarzi Amadè, Roman Grill, Nicola Zambelli, Davide Calestani, Andrea Zappettini, Leonardo Abbene, Manuele Bettelli
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract In this paper we present the development of quasi-hemispherical gamma-ray detectors based on CdZnTe. Among the possible single-polarity electrode configurations, such as coplanar, pixelated, or virtual Frisch-grid geometries, quasi-hemispher
Externí odkaz:
https://doaj.org/article/09b8bba119f049d49a6a116034fbc41c
Publikováno v:
Sensors, Vol 23, Iss 12, p 5681 (2023)
Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging condi
Externí odkaz:
https://doaj.org/article/4852bf2357bc4b76ab4caa3016e9c448
Publikováno v:
Sensors, Vol 22, Iss 1, p 171 (2021)
We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge accu
Externí odkaz:
https://doaj.org/article/891c3a21b64040a4895dda6e561f8798
Autor:
Igor Vasylchenko, Roman Grill, Marián Betušiak, Eduard Belas, Petr Praus, Pavel Moravec, Pavel Höschl
Publikováno v:
Sensors, Vol 21, Iss 8, p 2783 (2021)
The performance of the CdTe radiation detectors heavily relies on the method of contact preparation. A convenient research method addressing this problem is the laser-induced transient current technique. In this paper, we compare the performance of t
Externí odkaz:
https://doaj.org/article/0956179d60094a65ba9e63f5b13906a5
Autor:
Jan Franc, Václav Dědič, Pavel Moravec, Martin Rejhon, Roman Grill, Hassan Elhadidy, Vladimír Šíma, Miroslav Cieslar, Maroš Bratko, Utpal Roy, Ralph B. James
Publikováno v:
Materials, Vol 14, Iss 6, p 1465 (2021)
We studied the spectral dependence of the Vickers microhardness HV0.025 of CdZnTe and CdZnTeSe samples upon illumination and found out that it increases over the entire applied spectral range of 1540–750 nm. We also found out that the photoconducti
Externí odkaz:
https://doaj.org/article/26b3a973cad84121bb20c20fc054dde6
Publikováno v:
Sensors, Vol 22, Iss 171, p 171 (2022)
Sensors; Volume 22; Issue 1; Pages: 171
Sensors 22(1), nestránkováno. (2022)
Sensors (Basel, Switzerland)
Sensors; Volume 22; Issue 1; Pages: 171
Sensors 22(1), nestránkováno. (2022)
Sensors (Basel, Switzerland)
We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector’s resistance and space-charge accu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97aa706b4e567efeaf57dc068364ccf2
https://www.mdpi.com/1424-8220/22/1/171
https://www.mdpi.com/1424-8220/22/1/171
Publikováno v:
Sensors, Vol 20, Iss 15, p 4347 (2020)
We analyzed the influence of parameters of deep levels in the bulk and conditions on the surface on transient charge responses of semi-insulating samples (CdTe and GaAs). We studied the dependence on the applied bias step used for the experimental ev
Externí odkaz:
https://doaj.org/article/9faf540df009449796bca1b38396b5dc
Publikováno v:
Sensors, Vol 20, Iss 1, p 85 (2019)
Performance of the (CdZn)Te pixelated detectors heavily relies on the quality of the underlying material. Modern laser-induced transient current technique addresses this problem as a convenient tool for characterizing the associated charge distributi
Externí odkaz:
https://doaj.org/article/b0d950114b594749afd54bf641e1473c
Autor:
Václav Dědič, Jan Franc, Pavel Moravec, Jakub Zázvorka, Roman Grill, Vladimír Šíma, Miroslav Cieslar, Utpal Roy, Ralph B. James
Publikováno v:
Materials Science in Semiconductor Processing. 161:107448
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c472e5b75b1330c80a212f8f3bf5b676
https://doi.org/10.1016/j.mssp.2023.107448
https://doi.org/10.1016/j.mssp.2023.107448