Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Roman Gouk"'
Autor:
Jivaan Kishore, Steven Verhaverbeke, Kevin Luke, Kyle Jakes, Roman Gouk, Manish Keswani, Mingrui Zhao, Farhang Shadman
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P483-P488
One of the key active manufacturing technologies for 3D integration is through silicon vias (TSVs), which involves etching of deep vias in a silicon substrate that are filled with an electrodeposited metal, and subsequent removal of excess metal by c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec352cf4e666a702695e16a930bc077f
https://doi.org/10.1149/2.0111609jss
https://doi.org/10.1149/2.0111609jss
Autor:
Robert Jan Visser, Chen Han-Wen, Kurtis Leschkies, Roman Gouk, Nikos Bekiaris, Steven Verhaverbeke, Shiyu Sun
Publikováno v:
ECS Transactions. 69:119-130
Collapse of nanostructures with high aspect ratio (STI, 3D NAND, capacitor, FinFET, etc.) and/or low mechanical strength (ultra low-k trench, EUV resist pattern, etc.) during drying step in wet process has become a critical issue in semiconductor ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::faf5e67a56e74a829c80b9ce957a55c7
https://doi.org/10.1149/06908.0119ecst
https://doi.org/10.1149/06908.0119ecst
Autor:
Farhang Shadman, Zach Patterson, Steven Verhaverbeke, Rajesh Balachandran, Manish Keswani, Mingrui Zhao, Roman Gouk, C. Weber
Publikováno v:
Materials Science in Semiconductor Processing. 30:578-584
A novel electrochemical method for contactless electrodeposition of copper onto silicon wafers has been investigated. Deposition parameters such as applied current, concentrations of deposition solution and supporting electrolyte were optimized to ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1c11141a5f933ba364c7d907b571a98
https://doi.org/10.1016/j.mssp.2014.10.046
https://doi.org/10.1016/j.mssp.2014.10.046
Autor:
Steven Verhaverbeke, Roman Gouk, Zach Patterson, Rajesh Balachandran, Farhang Shadman, Manish Keswani, Mingrui Zhao
Publikováno v:
RSC Advances. 5:45291-45299
Packaging applications in the semiconductor industry rely on electrodepositing metals into high aspect ratio (HAR) vias without the formation of any defects or voids. The process and economic efficiency of conventional methodologies are limited by th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c9da0ec6323e03b6686ed282896e07e
https://doi.org/10.1039/c5ra03683f
https://doi.org/10.1039/c5ra03683f
Publikováno v:
Solid State Phenomena. 187:329-332
In thin film photovoltaic silicon stacks, the sun facing contact needs to be transparent and textured. Typically transparent metal oxides are used for this purpose. When using sputtered ZnO as the transparent conducting contact typically an acid etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c531395b9209266f5718c53b9ffcf9a
https://doi.org/10.4028/www.scientific.net/ssp.187.329
https://doi.org/10.4028/www.scientific.net/ssp.187.329
Autor:
C. Weber, Roman Gouk, Rajesh Balachandran, Zach Patterson, Manish Keswani, Steven Verhaverbeke
Publikováno v:
ECS Electrochemistry Letters. 3:D41-D43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3a2d0703457671e03759eb1809c4886
https://doi.org/10.1149/2.0031410eel
https://doi.org/10.1149/2.0031410eel
Publikováno v:
Solid State Phenomena. 134:363-366
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74d2621e6a9983f8eccea69413511b30
https://doi.org/10.4028/www.scientific.net/ssp.134.363
https://doi.org/10.4028/www.scientific.net/ssp.134.363
Autor:
Jianshe Tang, Jung Ho Han, Chung H. Jeon, Sung Won Park, Bo Xie, Wei Lu, Z Fred Li, Ven Subbaraman, Kent Child, Roman Gouk, Jason Wright, James S. Papanu
Publikováno v:
ECS Transactions. 11:117-122
As the technology node scales down to 45nm and beyond, removal of particles and metal contamination from wafer backsides have become critical for advanced lithography with smaller depth of focus, as well as to enable efficient metrology tool sharing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54fa2abd6538df86b9330e5bd79d0c08
https://doi.org/10.1149/1.2779370
https://doi.org/10.1149/1.2779370
Publikováno v:
Solid State Phenomena. :151-154
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d064b2c38e4581de17c1a982bf862b9e
https://doi.org/10.4028/www.scientific.net/ssp.103-104.151
https://doi.org/10.4028/www.scientific.net/ssp.103-104.151
Autor:
Jie Zeng, Maureen McKiernan, Steven Verhaverbeke, Miao Jin, Alejandro L. Briseno, Christopher Lazik, Kurtis Leschkies, Younan Xia, Sunzida Ferdous, Roman Gouk
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 6(17)
T his paper describes a facile method for coating Ag nanowires with uniform, ferromagnetic sheaths made of polycrystalline Ni. A typical sample of these core/sheath nanowires had a saturation magnetization around 33 emu g − 1 . We also demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5a8f145124b52be65035c2393591877
https://pubmed.ncbi.nlm.nih.gov/20677185
https://pubmed.ncbi.nlm.nih.gov/20677185