Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Roman Golman"'
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 14, Iss 1, p 2 (2024)
Embedded memories occupy an increasingly dominant part of the area and power budgets of modern systems-on-chips (SoCs). Multi-ported embedded memories, commonly used by media SoCs and graphical processing units, occupy even more area and consume high
Externí odkaz:
https://doaj.org/article/d160222fcfad4b69b0149dd288fc05a0
Autor:
Esteban Garzon, Roman Golman, Zuher Jahshan, Robert Hanhan, Natan Vinshtok-Melnik, Marco Lanuzza, Adam Teman, Leonid Yavits
Publikováno v:
IEEE Access, Vol 10, Pp 28080-28093 (2022)
This paper proposes a novel Hamming distance tolerant content-addressable memory (HD-CAM) for energy-efficient in-memory approximate matching applications. HD-CAM exploits NOR-type based static associative memory bitcells, where we add circuitry to e
Externí odkaz:
https://doaj.org/article/4186783c3d19433ba0a1e1b72147d769
Publikováno v:
IEEE Access, Vol 9, Pp 105831-105840 (2021)
Gain-cell embedded DRAM (GC-eDRAM) is a dense, low power option for embedded memory implementation, supporting low supply voltages; however, it suffers from limited data retention time (DRT) and requires periodic refresh operations, limiting its use
Externí odkaz:
https://doaj.org/article/fd497fd1d0b642789ad4b673dee32b88
Publikováno v:
IEEE Access, Vol 7, Pp 27641-27649 (2019)
A gain-cell embedded DRAM (GC-eDRAM) is an attractive logic-compatible alternative to the conventional static random access memory (SRAM) for the implementation of embedded memories, as it offers higher density, lower leakage, and two-ported operatio
Externí odkaz:
https://doaj.org/article/bc8b8db5928a4e7ebd12bc777db879c2
Autor:
Esteban Garzon, Roman Golman, Odem Harel, Tzachi Noy, Yehuda Kra, Asaf Pollock, Slava Yuzhaninov, Yonatan Shoshan, Yehuda Rudin, Yoav Weitzman, Marco Lanuzza, Adam Teman
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cfc7da4cf2a1b526d4e311629ca6fd5
https://doi.org/10.1109/iscas48785.2022.9937866
https://doi.org/10.1109/iscas48785.2022.9937866
Publikováno v:
IEEE Access. 9:105831-105840
Gain-cell embedded DRAM (GC-eDRAM) is a dense, low power option for embedded memory implementation, supporting low supply voltages; however, it suffers from limited data retention time (DRT) and requires periodic refresh operations, limiting its use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae28d8af835518bd5531870d941d2386
https://doi.org/10.1109/access.2021.3099970
https://doi.org/10.1109/access.2021.3099970
Publikováno v:
ISCAS
Modern SoCs area and power budgets are often dominated by embedded memories on board of the chip. Gain-cell embedded DRAM is a dense, low power memory solution, supporting low supply voltages; however, it suffers from limited data retention time (DRT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91976e9c0aca7446c9160ef300e3e2f0
https://doi.org/10.1109/iscas51556.2021.9401416
https://doi.org/10.1109/iscas51556.2021.9401416
Publikováno v:
ISCAS
Scopus-Elsevier
Scopus-Elsevier
Embedded memories occupy an increasingly dominant portion of the area and power budgets of modern SoCs and are also a limiting factor in V DD scaling. GC-eDRAM is a dense, low power option for embedded memory implementation, supporting low supply vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7b201f758ab11be1c70aa5ae1600cac
https://doi.org/10.1109/iscas45731.2020.9180875
https://doi.org/10.1109/iscas45731.2020.9180875
Publikováno v:
IEEE Access, Vol 7, Pp 27641-27649 (2019)
A gain-cell embedded DRAM (GC-eDRAM) is an attractive logic-compatible alternative to the conventional static random access memory (SRAM) for the implementation of embedded memories, as it offers higher density, lower leakage, and two-ported operatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0387865eb9a2c2687a1fd52254098621
https://doi.org/10.1109/access.2019.2901738
https://doi.org/10.1109/access.2019.2901738
Publikováno v:
Solid-State Electronics. 184:108060
Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics real
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f456dec8b1b17be849bb6b6f27d02b9b
https://doi.org/10.1016/j.sse.2021.108060
https://doi.org/10.1016/j.sse.2021.108060