Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Autor: Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa

Publikováno v: Energies, Vol 15, Iss 19, p 7062 (2022)

Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature depende

Externí odkaz: https://doaj.org/article/7c7b27fb43544754a03e4889af2ed11a

On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

Autor: Thomas Lorin, William Vandendaele, Romain Gwoziecki, Yannick Baines, Jerome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, G. Ghibaudo, F. Gaillard

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 956-964 (2018)

Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are associated with temperature dependent dynamic RON transie

Externí odkaz: https://doaj.org/article/984d9e63920f464baddde8de23e7191d

Development of Low-Resistance Ohmic Contacts with Bilayer NiO/Al-Doped ZnO Thin Films to p-type GaN

Autor: Taoufik Slimani Tlemcani, Clément Mauduit, Micka Bah, Meiling Zhang, Matthew Charles, Romain Gwoziecki, Arnaud Yvon, Daniel Alquier

Publikováno v: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, 2023, 15 (6), pp.8723-8729. ⟨10.1021/acsami.2c21106⟩

International audience; The fabrication of low-resistance and thermally stable Ohmic contacts is essential for the realization of reliable GaN power devices. In the particular case of p-type GaN, a thin Ni/Au bilayer is commonly used for Ohmic contac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7609523f38c99793e53bf061a4d442d0
https://hal.science/hal-04052512

Impact of Substrate Biasing During AlN Growth by PEALD on Al 2 O 3 /AlN/GaN MOS Capacitors

Autor: Maxime Legallais, Gauthier Lefevre, Simon Martin, Sébastien Labau, Franck Bassani, Bernard Pélissier, Thierry Baron, Laura Vauche, Cyrille Le Royer, Matthew Charles, William Vandendaele, Marc Plissonnier, Romain Gwoziecki, Bassem Salem

Publikováno v: Advanced Materials Interfaces. 9:2101731

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79492b0cbadff2416e50eec45decc1d4
https://doi.org/10.1002/admi.202101731

Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate

Autor: Thomas Lorin, Vandendaele, W., Romain Gwoziecki, Gillot, C., Biscarrat, J., gerard ghibaudo, Gaillard, F.

Publikováno v: Proceedings of EPE'18 ECCE Europe
20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)
20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia
HAL

International audience; Dynamic Ron measurements and substrate ramping characterization have been performed on GaN-based Schottky diodes and TLM test structures with different back barrier configurations. Parameters such as channel length, ramp rate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::057ef7799b7be3d3f461988884398644
https://hal.archives-ouvertes.fr/hal-02050406