Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Romain Guetard"'
Autor:
Romain Guetard, Antonin Pastre, Flavien Dozolme, Aurelien Janvresse, Pierre Lebosse, Jean-Claude Clement, Julien Coutet, François Marc
Publikováno v:
Microelectronics Reliability. :61-66
This paper presents an analysis of the reliability of 20 nm technology NAND Flash memory components based on Multiple Level Cells (MLC). The focus of the study is to assess the influence of temperature during programming, storage and reading operatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93f2ae7977b2eba868579d98d3d5d1a1
https://doi.org/10.1016/j.microrel.2018.06.088
https://doi.org/10.1016/j.microrel.2018.06.088
Autor:
Aurelien Janvresse, Romain Guetard, Antonin Pastre, Suzel Lavagne, Pierre Lebosse, Julien Coutet, Michel Sarlotte, E. Doche, Franck Bayle, C. Moreau, François Marc
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113442. ⟨10.1016/j.microrel.2019.113442⟩
Microelectronics Reliability, 2019, 100-101, pp.113442. ⟨10.1016/j.microrel.2019.113442⟩
Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113442. ⟨10.1016/j.microrel.2019.113442⟩
Microelectronics Reliability, 2019, 100-101, pp.113442. ⟨10.1016/j.microrel.2019.113442⟩
This paper deals with data analysis of long term (2 years) accelerated stress test of a 65 nm ASIC dedicated to cryptographic applications. Several stress conditions have been applied by combining both thermal and electrical overvoltage stresses. At
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7547ea900b412035b7f97d7f96af3eca
https://hal.archives-ouvertes.fr/hal-02394907
https://hal.archives-ouvertes.fr/hal-02394907
