Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Romain Beal"'
Publikováno v:
Optics & Laser Technology
Optics & Laser Technology, 2016, 78, pp.5-9. ⟨10.1016/j.optlastec.2015.10.002⟩
Optics & Laser Technology, 2016, 78, pp.5-9. ⟨10.1016/j.optlastec.2015.10.002⟩
The ultraviolet laser induced quantum well intermixing process has been investigated for prototyping of multiple bandgap quantum well (QW) wafers designed for the fabrication of superluminescent diodes (SLDs). The process takes advantage of a krypton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::132d66b2a64cecd1f3faf5c5362f4e08
https://doi.org/10.1016/j.optlastec.2015.10.002
https://doi.org/10.1016/j.optlastec.2015.10.002
Publikováno v:
Optics & Laser Technology. 54:401-406
We report on the fabrication of superluminescent diodes (SLD) from a graded bandgap quantum well intermixed (QWI) material obtained by an infrared laser rapid thermal annealing (IR Laser-RTA) technique. The processed semiconductor wafer consisted of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67665ed94463b0a65f1ce048a0015459
https://doi.org/10.1016/j.optlastec.2013.06.032
https://doi.org/10.1016/j.optlastec.2013.06.032
Publikováno v:
Optics express. 23(2)
Excimer (ultraviolet) laser-induced quantum well intermixing (UV-Laser-QWI) is an attractive technique for wafer level post-growth processing and fabrication of a variety of monolithically integrated photonic devices. The results of UV-Laser-QWI empl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2c8bf58006aa1034dd939ca5807db1a
https://pubmed.ncbi.nlm.nih.gov/25835867
https://pubmed.ncbi.nlm.nih.gov/25835867
Publikováno v:
2011 ICO International Conference on Information Photonics.
Superluminescent diodes are used in numerous sensing and testing applications. To achieve the wide emission spectrum and high power required from such devices, we studied an innovative design constituting in several different bandgap energy sections
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ffa8eda05809e2e4f31478257c0022
https://doi.org/10.1109/ico-ip.2011.5953731
https://doi.org/10.1109/ico-ip.2011.5953731
Publikováno v:
Applied Physics Letters. 93:071106
Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c1f443eb65e83f53a8294b6269f2ba7
https://doi.org/10.1063/1.2969063
https://doi.org/10.1063/1.2969063