Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology

Autor: Szymon Bugiel, Andrei Dorokhov, Mauro Aresti, Jerome Baudot, Stefania Beole, Auguste Besson, Roma Bugiel, Leonardo Cecconi, Claude Colledani, Wenjing Deng, Antonello Di Mauro, Ziad El Bitar, Mathieu Goffe, Jan Hasenbichler, Geun Hee Hong, Christine Hu-Guo, Kimmo Jaaskelainen, Alex Kluge, Magnus Mager, Davide Marras, Joao de Melo, Magdalena Munker, Hung Pham, Francesco Piro, Felix Reidt, Gianluca Aglieri Rinella, Roberto Russo, Valerio Sarritzu, Serhiy Senyukov, Walter Snoeys, Miljenko Suljic, Gianluca Usai, Isabelle Valin, Marc Winter, Yitao Wu

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65 nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes com

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2659::c7bb4a32e04e97525152e57ee6dadc64
https://zenodo.org/record/7115582

Test-beam results of a SOI pixel-detector prototype

Autor: A. Fiergolski, P. Kapusta, Andreas Nürnberg, Dominik Dannheim, Roma Bugiel, Wojciech Kucewicz, D. Hynds, Szymon Bugiel, R.M. Münker, Marek Idzik

Publikováno v: Nuclear instruments & methods in physics research / A, 901, 173-179
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μ m thic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74399927327c12ba84dd6c2419ff3232
https://doi.org/10.1016/j.nima.2018.06.017