High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

Autor: Erdin Ture, Peter Bruckner, Birte-Julia Godejohann, Rolf Aidam, Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Rudiger Quay, Oliver Ambacher

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 4, Iss 1, Pp 1-6 (2016)

Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors ar

Externí odkaz: https://doaj.org/article/0bfbf3a76e014c1997607dcc0c39d50d

Interface tomography of GaInAs/AlInAs quantum cascade laser active regions

Autor: Ekaterina Paysen, Sebastian Schütt, Sondre Michler, Quankui Yang, Rolf Aidam, Achim Trampert

Publikováno v: Semiconductor Science and Technology. 38:055009

We present a high-resolution electron tomography study of buried ultra-thin layers and their interfaces from the active region of a (Ga,In)As/(Al,In)As quantum cascade laser (QCL) test structure. Using a high-angle annular dark-field scanning transmi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fa19ac3d5981601a1aad5a1c08e8f9f
https://doi.org/10.1088/1361-6641/acc34f

Leakage mechanism in Al x Ga1−x N/GaN heterostructures with AlN interlayer

Autor: Klaus Köhler, Wilfried Pletschen, Lutz Kirste, Stefano Leone, Stefan Müller, Rolf Aidam, Wolfgang Bronner, Peter Brückner, Patrick Waltereit, Vladimir Polyakov, Oliver Ambacher

Publikováno v: Semiconductor Science and Technology. 37:025016

Leakage of Al x Ga1−x N/GaN heterostructures was investigated by admittance–voltage profiling. Nominally undoped structures were grown by low-pressure metal-organic vapor-phase epitaxy. The investigated structures had an Al-content of 30%. They a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1aa61fd86921f432c08756c7ad460825
https://doi.org/10.1088/1361-6641/ac44e3

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

Autor: Mathias Marx, Andrei Vescan, Michael Heuken, Birte-Julia Godejohann, Simon Kotzea, Holger Kalisch, Wiebke Witte, Rolf Aidam

Publikováno v: Electronics
Volume 8
Issue 4
Electronics : open access journal 8(4), 377 (2019). doi:10.3390/electronics8040377
Electronics, Vol 8, Iss 4, p 377 (2019)

Electronics 8(4), 377 - (2019). doi:10.3390/electronics8040377
Published by MDPI, Basel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08a2f2ce90146b698588cb865a30e24f

InGaAs APD matrix sensors for SWIR gated viewing

Autor: Wolfgang Bronner, Robert Rehm, M. Benecke, Peter Lutzmann, Henning Heußen, Frank Rutz, Rolf Aidam, A. Sieck, Simon Brunner, Benjamin Göhler

Short-wavelength infrared (SWIR) detection systems are increasingly in demand for surveillance, reconnaissance, and remote sensing applications. Eye-safe SWIR lasers can be utilized for active imaging systems with high image contrast and long detecti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d566738b2b07c060de54614dee1d0e3
https://publica.fraunhofer.de/handle/publica/261120