Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Rolf Öttking"'
Autor:
Daniel Fluhr, Beat Ruhstaller, Burhan Muhsin, Rolf Öttking, Simon Züfle, Stefan Krischok, Roland Roesch, Harald Hoppe, Ulrich S. Schubert, Marco Seeland
Article 1800474 Appreciable progress has been achieved in the development of organic photovoltaics (OPV) over the last decade. However, further improvement of operational stability remains a challenge. In this contribution, focus is placed on corrosi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13d1a7971bc001e8717bbf00df8199ec
https://hdl.handle.net/11475/15723
https://hdl.handle.net/11475/15723
Autor:
Guntrade Roll, Thomas Mikolajick, Rolf Öttking, Florian Lazarevic, Philipp Plänitz, S. Kupke, R. Leitsmann, Ebrahim Nadimi, Stefan Slesazeck, Martin Trentzsch
Publikováno v:
physica status solidi (a). 212:547-553
An important source of degradation in thin dielectric material layers is the generation and migration of oxygen vacancies. We investigated the formation of Frenkel pairs (FPs) in HfO2 as the first structural step for the creation of new defects as we
Autor:
Stefan Slesazeck, S. Kupke, Thomas Mikolajick, Steve Knebel, Philipp Plänitz, Guntrade Roll, Martin Trentzsch, Rolf Öttking, C. Radehaus, Michael Schreiber, Rimoon Agaiby, Ebrahim Nadimi
Publikováno v:
IEEE Transactions on Electron Devices. 61:1278-1283
Theoretical and experimental methods are applied to investigate the degradation of SiO2/HfO2 gate-stacks in state-of-the-art MOSFETs. A combination of density functional theory and nonequilibrium Green's function formalism has been applied to the ato
Publikováno v:
IEEE Transactions on Electron Devices. 57:690-695
A combination of density functional theory and nonequilibrium Green's function formalism has been applied to the atomic scale calculation of the leakage current through SiO2 and SiOxNy dielectrics of MOSFETs. Samples with different dielectric thickne
Publikováno v:
Solar RRL. 1:1700018
We developed a finite element model of a finger structure polymer solar cell in conventional architecture in order to investigate current pathways and dissipative power losses. The model is of purely resistive nature, as this is sufficient to describ
Publikováno v:
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG).
The interaction between oxygen vacancies and dopant atoms in HfO2 dielectric were studied using first principles total energy calculations. Beside La dopants also the influence of fluorine and nitrogen atoms has been studied. La dopants in the vicini
Autor:
Martin Trentzsch, C. Radehaus, Michael Schreiber, Rolf Öttking, Torben Kelwing, Philipp Plänitz, Ebrahim Nadimi, Rick Carter
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 23(36)
The interaction between oxygen vacancies and La atoms in the La doped HfO(2) dielectric were studied using first principles total energy calculations. La dopants in the vicinity of a neutral oxygen vacancy (V(O)) show lower formation energy compared
Publikováno v:
Journal of Applied Physics. 117:244503
Intrinsic defect structures and impurity atoms are one of the main sources of leakage current in metal-oxide-semiconductor devices. Using state of the art density functional theory, we have investigated oxygen, lanthanum, and fluorine related defect