Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Roland Sorge"'
Publikováno v:
DSD
If devices are physically accessible optical fault injection attacks pose a great threat since the data processed as well as the operation flow can be manipulated. Successful physical attacks may lead not only to leakage of secret information such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ad0a5d6b0f41c1b31a82eef1edb72b
https://doi.org/10.1109/dsd53832.2021.00062
https://doi.org/10.1109/dsd53832.2021.00062
Publikováno v:
IEEE Transactions on Nuclear Science. 64:1037-1041
We have investigated the ionization damage by 60Co gamma irradiation in 0.13- and 0.25- $\mu \text{m}$ SiGe heterojunction bipolar transistors (HBTs). Both technologies feature high-speed HBTs (HS-HBTs) together with high-voltage HBTs (HV-HBTs). Base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d711f4c0268e666ca0acbe85bd1b0e9b
https://doi.org/10.1109/tns.2017.2682927
https://doi.org/10.1109/tns.2017.2682927
Autor:
Roland Sorge, C. Wipf
Publikováno v:
2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
A level shifter with minimum static power consumption for a high side operation up to 42V was designed. Due to a current leakage below 500 nA the high side voltage can be provided by a on-chip charge pump. The level shifter core has a high side outpu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2beaf52bbbc8d0eda5a501617228ac9b
https://doi.org/10.1109/sirf.2017.7874358
https://doi.org/10.1109/sirf.2017.7874358
Publikováno v:
2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
In this article we report on the capability of integrated LDMOS transistors for power amplifiers in 10 gigabit per second (Gbps) communication systems, smart power systems and X-band power amplifiers. The switched mode properties of the amplifier wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::639f92493cee663bcae36f044fc15703
https://doi.org/10.1109/sirf.2016.7445467
https://doi.org/10.1109/sirf.2016.7445467
Autor:
Salvador Hidalgo, Roland Sorge, Miguel Ullan, Sergio Diez, David Flores, F. R. Palomo, Pablo Fernandez-Martinez
Publikováno v:
Microelectronics Journal. 43:50-56
Due to the increasing interest on laterally diffused MOS (LDMOS) transistors as a part of power electronics in the high energy physics (HEP) experiments, the effect of total ionising dose (TID) on their electrical performances has been experimentally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f5a20182a8f996240e9b8af54657b9
https://doi.org/10.1016/j.mejo.2011.10.013
https://doi.org/10.1016/j.mejo.2011.10.013
Autor:
Roland Sorge
Publikováno v:
Microelectronics Reliability. 43:167-171
The most critical parameter for deep sub-micron MOS field effect transistors is the threshold voltage, which is highly dependent on processing specifically, the ion implanted channel dose. Monitoring the channel doping on product wafers is highly des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c7b00a770aef2e6239bed05d41d3b73
https://doi.org/10.1016/s0026-2714(02)00266-4
https://doi.org/10.1016/s0026-2714(02)00266-4
Autor:
Roland Sorge, Bernd Heinemann
Publikováno v:
Microelectronics Reliability. 41:789-795
Electrically active defects in the device region are routinely monitored by CV measurements of reverse-biased field-induced (FI) pn junctions in MOS structures. While useful, this approach is sensitive only to near mid gap defects. Here, we demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a2bf380fc921d85e4aa88e2ad13e3f3
https://doi.org/10.1016/s0026-2714(01)00040-3
https://doi.org/10.1016/s0026-2714(01)00040-3
Autor:
Roland Sorge
Publikováno v:
Solid-State Electronics. 42:761-770
We report rapid, non-quasistatic CV (capacitance–voltage) measurements for a comprehensive characterization of MOS structures. The purpose is to speed up and simplify the characterization of simple MOS test structures in a process line environment.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a62d84326065462cece8be0ded1de9e
https://doi.org/10.1016/s0038-1101(97)00261-x
https://doi.org/10.1016/s0038-1101(97)00261-x
Autor:
Roland Sorge
Publikováno v:
Solid-State Electronics. 38:1479-1484
A novel technique for determining the generation rate in MOS structures based on the measurement of two independent gate current sweeps in non-equilibrium, non-steady state is presented. The described method allows the selfconsistent evaluation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0703857d57699f7dc16481689e9c1311
https://doi.org/10.1016/0038-1101(94)00287-p
https://doi.org/10.1016/0038-1101(94)00287-p
Autor:
Miguel Ullan, Roland Sorge, Florian E. Teply, Rene F. Scholz, Federico Faccio, Sergio Diez, Heinz-Volker Heyer, Dinesh Venkitachalam
Publikováno v:
2011 12th European Conference on Radiation and Its Effects on Components and Systems.
In recent years, several radiation tests on IHP's 0.25 µm SiGe BiCMOS technology SGB25V have been performed. For evaluation by the European Space Components Coordination (ESCC), it has been decided to spin off a dedicated radiation-hard technology S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a729916b5108659e4cd26fb2ea17a6a1
https://doi.org/10.1109/radecs.2011.6131321
https://doi.org/10.1109/radecs.2011.6131321