Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Roland Hahn"'
Publikováno v:
Raumforschung und Raumordnung, Vol 52, Iss 3 (1994)
Kernprozeß des Strukturwandels ist die Innovationstätigkeit der Unternehmen. Über die Bildung regionaler Netzwerke kann darauf wesentlich Einfluß genommen werden. Die Unternehmen sind weniger mit der Region als mit der Nation verflochten. Das gil
Externí odkaz:
https://doaj.org/article/638d13cee71d4cd6beb2f0c1647dd9bc
Autor:
Roland Hahn, Arne Gaiser
Publikováno v:
Raumforschung und Raumordnung, Vol 49, Iss 5 (1991)
Dominantes einzelbetriebliches Wirtschaftsförderkonzept des Landes Baden-Württemberg ist das Modernisierungsprogramm. Sowohl innovierende Unternehmen der Wachstumsbranchen und der traditionellen Branchen als auch Unternehmen in Agglomerationsräume
Externí odkaz:
https://doaj.org/article/fc6e4904cfcb48dda1185350d114ebf9
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:461-468
This paper details an application where E-beam inspection (EBI) can be used for 100% full wafer inspection, generally considered a mythical target for EBI. For process layers where the line-widths and defects of interest are large, very large pixel s
Autor:
Sumanth Kini, Andrew Stamper, Charu Tejwani, Sang Y. Chong, Carol Boye, Ralf Buengener, Roland Hahn, Bryan N. Rhoads, Sean D. Burns, Kourosh Nafisi, Colin J. Brodsky, S. Fan
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:165-172
PWC (Process Window Centering) is an efficient methodology to validate or adjust and center the overall process window for a particular lithography layer by detecting systematic and random defects. The PWC methodology incorporates a defect inspection
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
This paper details an application where E-Beam Inspection (EBI) can be used for 100% full wafer inspection, generally considered a mythical target for EBI. For process layers where the line-widths and defects of interest (DOI) are large, very large p
Autor:
Brian W. Messenger, Oh Jung Kwon, Oliver D. Patterson, Roland Hahn, Brian F. Donovan, N. Arnold, William Y. Chang, Jin Liu
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
Improvement of learning cycle time and mean time to detect issues is integral to keeping up with the increasing pace needed in semiconductor technology development. Use of electron beam voltage contrast inspection as an early assessment of electrical
Autor:
Carol Boye, Roland Hahn, Joe Connors, Rajesh Ghaskadvi, Christopher J. Penny, Cezary Janicki, Donna Boyles
Publikováno v:
2012 SEMI Advanced Semiconductor Manufacturing Conference.
This paper proposes that the non-visual defect rate for Litho layers is an indicator of the quality of the process up to and including Litho. “Non-visual” (NV) defects are those detected by optical defect inspection systems but not re-detected by
Publikováno v:
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
Defect inspection plays a large role in the development and manufacture of semiconductor technologies. Defects detected in today's inspections tools are generally a fraction of a micron and require SEM review to analyze and justify corrective measure
Autor:
Roland Hahn, Katherine V. Hawkins, Oliver D. Patterson, Brian W. Messenger, Eric H. Beckmann, R. Takalkar, Xing J. Zhou
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Embedded DRAM will play a much larger part in IBM server microprocessors for new SOI technologies. Etch of a deep trench (DT) into the substrate, which is used to form the capacitor, is a complicated multi-step process. One of the key elements is etc
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspe