Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Roland Baranyai"'
Autor:
Robert C. Fitch, J. J. Maurer, Roland Baranyai, Gregg H. Jessen, Jonathan Felbinger, Karynn A. Sutherlin, John D. Blevins, Kelson D. Chabak, James W Pomeroy, Martin Kuball, A. Bar-Cohen, R. Gilbert, B. Poling, Antonio Crespo, S. Tetlak, Glen D. Via, T. Cooper, James K. Gillespie
Publikováno v:
physica status solidi c. 11:871-874
A wafer-scale comparison of HEMTs fabricated on as-grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room-temperature thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e121a7cfaee11849d1a350bd5b3acb
https://doi.org/10.1002/pssc.201300504
https://doi.org/10.1002/pssc.201300504
Autor:
Charles R. Eddy, Jennifer K. Hite, Marko J. Tadjer, Travis J. Anderson, Martin Kuball, David J. Meyer, Michael A. Mastro, Karl D. Hobart, Fritz J. Kub, Neeraj Nepal, Mario G. Ancona, Roland Baranyai, Bradford B. Pate, James W Pomeroy, Andrew D. Koehler, Tatyana I. Feygelson
Publikováno v:
ECS Transactions. 58:279-286
The concept for and design/fabrication of a GaN power transistor with integrated thermal management is presented. Key elements of the design, including those supporting enhancement-mode operation, high breakdown voltages and low on-resistance are des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f82814e106d8216634ae070bc7a8e71
https://doi.org/10.1149/05804.0279ecst
https://doi.org/10.1149/05804.0279ecst
Publikováno v:
ECS Meeting Abstracts. :1212-1212
Diamond has demonstrated excellent properties for thermal management of GaN electronics. In this presentation, we review our latest results on the diamond properties near the GaN-on-diamond interface, and the mechanical stability of the GaN-on-diamon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2d411165060f72950c30a1349240097
https://doi.org/10.1149/ma2016-01/24/1212
https://doi.org/10.1149/ma2016-01/24/1212
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