Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Rohith Soman"'
Publikováno v:
IEEE Electron Device Letters. 44:841-844
Autor:
Xinyu Zhou, Mohamadali Malakoutian, Rohith Soman, Zhengliang Bian, Rafael Perez Martinez, Srabanti Chowdhury
Publikováno v:
IEEE Transactions on Electron Devices. 69:6650-6655
Publikováno v:
IEEE Electron Device Letters. 43:1527-1530
Autor:
Kwang Jae, Lee, Yusuke, Nakazato, Jaeyi, Chun, Xinyi, Wen, Chuanzhe, Meng, Rohith, Soman, Maliha, Noshin, Srabanti, Chowdhury
Publikováno v:
Nanotechnology. 33(50)
Embedding
Publikováno v:
IEEE Electron Device Letters. :1-1
Autor:
Kwang Jae Lee, Yusuke Nakazato, Jaeyi Chun, Xinyi Wen, Chuanzhe Meng, Rohith Soman, Maliha Noshin, Srabanti Chowdhury
Publikováno v:
Nanotechnology. 33:505704
Embedding p-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent epitaxial layers is a key for designing various multi-junction structures with high precision and enabling more reliable bandgap engineering of III-nitride-based op
Autor:
Mohamadali Malakoutian, Xiang Zheng, Kelly Woo, Rohith Soman, Anna Kasperovich, James Pomeroy, Martin Kuball, Srabanti Chowdhury
Publikováno v:
Advanced Functional Materials. 32:2208997
Autor:
Digbijoy N. Nath, Anamika Singh Pratiyush, Rangarajan Muralidharan, Sandeep Kumar, Rohith Soman
Publikováno v:
IEEE Transactions on Electron Devices. 66:3310-3317
We report on the quantitative estimates of various metrics of performance for $\beta $ -Ga2O3-based high electron mobility transistors (HEMTs) for RF and power applications and compare them with III-nitride devices. Device parameters such as electron
Publikováno v:
Semiconductor Science and Technology. 37:075018
Vertical gallium nitride (GaN) devices are strong candidates for next generation power electronics. Such vertical devices almost always require epitaxial regrowth of GaN. However, impurities present at the regrowth interfaces result in device degrada
Autor:
Srinivasan Raghavan, Rohith Soman, Navakanta Bhat, Manish Sharma, Rangarajan Muralidharan, Digbijoy N. Nath, K. N. Bhat, Nayana Ramesh
Publikováno v:
ECS Transactions. 86:161-168
Atlas silvaco simulation has been performed to explore the effectiveness of buried channel architecture on AlGaN/GaN HEMTs for normally-off operation. The buried channel operation is achieved by adding a p-n junction in the GaN buffer. Thicknesses an