Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Rohit S. Shenoy"'
Autor:
Pritish Narayanan, Geoffrey W. Burr, Rohit S. Shenoy, Samantha Stephens, Kumar Virwani, Alvaro Padilla, Bulent N. Kurdi, Kailash Gopalakrishnan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 5, Pp 423-434 (2015)
Large-scale 3-D crossbar arrays offer a path to both high-density storage class memory and novel non-Von Neumann computation. However, such arrays require each non-volatile memory (NVM) element to have its own non-linear access device (AD), which mus
Externí odkaz:
https://doaj.org/article/4c570c9c7bb44d3b9e47465966dc55b9
Autor:
Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen W. Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen V. Prabhu, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat M. Pathak, Pranav Kalavade
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177753a2ce8bb9f42c2ea9a8a3d32f41
https://doi.org/10.1109/isscc42615.2023.10067616
https://doi.org/10.1109/isscc42615.2023.10067616
Autor:
Rezaul Haque, Aliasgar S. Madraswala, Cindy Sun, Bharat M. Pathak, Jacqueline Snyder, Kristopher H. Gaewsky, Ali Khakifirooz, Binh Ngo, Chang Wan Ha, Prabhu Naveen Vittal, Karthikeyan Ramamurthi, Fastow Richard, Shantanu R. Rajwade, Owen W. Jungroth, Deepak Thimmegowda, Pranav Kalavade, Rohit S. Shenoy, Steven Law, Sriram Balasubrahmanyam
Publikováno v:
ISSCC
Continued improvement in the 3D NAND bit density is essential to satisfy the exponentially growing demand for data storage. The transition from 3b/cell (TLC) to 4b/cell (QLC) is a significant step towards delivering higher bit density. The increased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb44bd4a0a1dc88696b6b21df77445d2
https://doi.org/10.1109/isscc42613.2021.9365777
https://doi.org/10.1109/isscc42613.2021.9365777
Autor:
Junwoo Jang, Irem Boybat, B. N. Kurdi, Pritish Narayanan, E.U. Giacometti, Geoffrey W. Burr, Robert M. Shelby, Carmelo di Nolfo, Kumar Virwani, Hyunsang Hwang, Rohit S. Shenoy, Severin Sidler
Publikováno v:
IEEE Transactions on Electron Devices. 62:3498-3507
Using two phase-change memory devices per synapse, a three-layer perceptron network with 164 885 synapses is trained on a subset (5000 examples) of the MNIST database of handwritten digits using a backpropagation variant suitable for nonvolatile memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9a3ac2183080637b131d8f008f41841
https://doi.org/10.1109/ted.2015.2439635
https://doi.org/10.1109/ted.2015.2439635
Autor:
Alvaro Padilla, B. N. Kurdi, Pritish Narayanan, Kumar Virwani, Rohit S. Shenoy, Kailash Gopalakrishnan, Samantha Stephens, Geoffrey W. Burr
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 5, Pp 423-434 (2015)
Large-scale 3-D crossbar arrays offer a path to both high-density storage class memory and novel non-Von Neumann computation. However, such arrays require each non-volatile memory (NVM) element to have its own non-linear access device (AD), which mus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5bc1077605536beed0ead464f7b4eff4
https://ieeexplore.ieee.org/document/7118641/
https://ieeexplore.ieee.org/document/7118641/
Autor:
Pawan Kapur, Tejas Krishnamohan, Ali Kemal Okyay, Krishna C. Saraswat, Ammar Nayfeh, Chi On Chui, Rohit S. Shenoy
Publikováno v:
International Journal of High Speed Electronics and Systems. 16:175-192
It is believed that below the 65-nm node although the conventional bulk CMOS can be scaled, however, without appreciable performance gains. To continue the scaling of Si CMOS in the sub-65nm regime, innovative device structures and new materials have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7cd4c59a4ea7b6d29f9e3edda0237ad
https://doi.org/10.1142/s0129156406003606
https://doi.org/10.1142/s0129156406003606
Autor:
Davide Garetto, Bryan L. Jackson, Alvaro Padilla, Bipin Rajendran, Matthew J. Breitwisch, Kailash Gopalakrishnan, B. N. Kurdi, Chung H. Lam, Luis A. Lastras, Rohit S. Shenoy, Simone Raoux, Michele M. Franceschini, Geoffrey W. Burr
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1462688f528f3584ede10feaa9477ead
Autor:
Rohit S Shenoy, Geoffrey W Burr, Kumar Virwani, Bryan Jackson, Alvaro Padilla, Pritish Narayanan, Charles T Rettner, Robert M Shelby, Donald S Bethune, Philip M Rice, Teya Topuria, Andrew J Kellock, Bülent Kurdi, Karthik V Raman, Matthew BrightSky, Eric Joseph, Kailash Gopalakrishnan
Publikováno v:
Semiconductor Science & Technology; Oct2014, Vol. 29 Issue 10, p1-1, 1p