Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Rohit R. Karnaty"'
Autor:
Rohit R. Karnaty, Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Umesh K. Mishra, James F. Buckwalter
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:1932-1944
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabec0d12f8f6dadf31cf5ee374904d4
https://doi.org/10.1109/tmtt.2023.3245668
https://doi.org/10.1109/tmtt.2023.3245668
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06f50fc912f38b5d79d61cc2f4bfef68
https://doi.org/10.1109/ims37962.2022.9865398
https://doi.org/10.1109/ims37962.2022.9865398
Autor:
Umesh K. Mishra, Athith Krishna, Matthew Guidry, James F. Buckwalter, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Pawana Shrestha, Shubhra S. Pasayat, Christian Wurm, Stacia Keller
Publikováno v:
IEEE Electron Device Letters. 41:681-684
Though GaN HEMTs have primarily been used for power amplification, they are also well suited for receiver applications. In the front-end of receivers, non-linearities, in particular third-order intermodulation products lead to in-band signal distorti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e3512704def95f69117a3bbfd19c39
https://doi.org/10.1109/led.2020.2980841
https://doi.org/10.1109/led.2020.2980841
Autor:
Stacia Keller, Christian Wurm, Rohit R. Karnaty, Nirupam Hatui, Matthew Guidry, Shubhra S. Pasayat, Pawana Shrestha, Umesh K. Mishra, Brian Romanczyk, James F. Buckwalter, Athith Krishna
Publikováno v:
DRC
N-polar GaN MISHEMTs have recently demonstrated excellent power performance and power-added efficiency at 94 GHz [1] . At mm-wave frequencies and high data rates, the linearity of an RF transistor is an important requisite. Third-order non-linearitie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::240361c763a5ba11809940e0462b8b1b
https://doi.org/10.1109/drc50226.2020.9135169
https://doi.org/10.1109/drc50226.2020.9135169
Autor:
Nirupam Hatui, Pawana Shrestha, Haoran Li, Stacia Keller, Christian Wurm, Xun Zheng, James F. Buckwalter, Rohit R. Karnaty, Brian Romanczyk, Matthew Guidry, Umesh K. Mishra
Publikováno v:
BCICTS
Nitrogen-polar (N-polar) Gallium Nitride (GaN) deep-recess high-electron mobility transistors (HEMTs) have demonstrated exceptional power density (8 W/mm) and high efficiency at 30 and 94 GHz. Unlike the conventional Galliumpolar GaN which have typic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3bed5ae3891e8d14d525f7d160206e2
https://doi.org/10.1109/bcicts45179.2019.8972774
https://doi.org/10.1109/bcicts45179.2019.8972774