Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Rohan Bambery"'
Publikováno v:
IEEE Photonics Technology Letters. 27:600-603
Data are presented showing error-free transmission by a 200- $\mu $ m-long transistor laser at 15 °C. The device has a threshold current of 30 mA and exhibits a modulation bandwidth of $f_{\mathbf {-3dB}} = 10.4$ GHz at I $_{B}= 85$ mA and V $_{\mat
Publikováno v:
IEEE Photonics Technology Letters. 26:1542-1545
Publikováno v:
IEEE Photonics Technology Letters. 26:1003-1006
Data are presented on low-power operation in a vertical cavity transistor laser via reduced collector offset voltage by placing the emitter contact on the top of four pairs of the GaAs/AlGaAs DBR to reduce emitter resistance and subsequently depositi
Publikováno v:
IEEE Photonics Technology Letters. 26:702-705
A 780 nm emission wavelength (far-red) oxide-confined vertical cavity surface-emitting laser with a threshold current of 0.6 mA at 20 °C is demonstrated. The device shows an 11.2 GHz modulation bandwidth when biased at I=8 mA (I/ITH=13.3), and it ac
Publikováno v:
IEEE Photonics Technology Letters. 25:859-862
Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (~ 30 ps) in the base region results in a resonance-free frequency respons
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Publikováno v:
Applied Physics Letters. 104:081117
Data are presented to quantify the effect of the conduction band energy barrier (ΔEC,B) in the base region of the transistor laser on the minority carrier transport dynamics, recombination lifetime in the base region, and frequency response of the d
Publikováno v:
Applied Physics Letters. 101:151118
A quantum well transistor laser with a base cavity length L = 300 μm has been designed, fabricated, and operated at threshold ITH = 25 mA (0 °C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transist
Publikováno v:
Applied Physics Letters. 99:061105
A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold ITH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the “fast” base recombination lifetime (τB
Publikováno v:
Applied Physics Letters. 98:123505
Data and a phenomenological model for quantum-well (QW) transistor laser operation are presented showing, via the three-port input-output (electrical and optical) characteristics, the strong QW to collector coupling and the influence of bandfilling (