Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Roger Lozar"'
Autor:
Friedbert van Raay, Fabian Thome, Christian Friesicke, Roger Lozar, Sebastian Krause, Michael Mikulla, Rudiger Quay
Publikováno v:
2022 52nd European Microwave Conference (EuMC).
Autor:
Matthias Ohlrogge, Nick M. Ridler, Thorsten Probst, Xiaobang Shang, Rainer Weber, Roger Lozar, Uwe Arz
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:3475-3484
In this paper, we present a comparative study of S-parameter measurements of electronic components on planar substrates performed with a waveguide module and in a conventional on-wafer probing environment. Measurements were conducted at three well-es
Autor:
Peter Brückner, Christian Friesicke, Oliver Ambacher, Dirk Schwantuschke, Sandrine Wagner, Roger Lozar, Hermann Mabler, Rudiger Quay, Maciej Cwiklinski
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:5664-5675
In this paper, we describe the design of the first reported full W-band (75–110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology. The discussed MMICs come in two versions. Over a bandwid
Autor:
Peter Brückner, Thomas Maier, Roger Lozar, Arne F. Jacob, Rudiger Quay, S. Samis, Christian Friesicke
Publikováno v:
2020 23rd International Microwave and Radar Conference (MIKON).
The paper investigates experimentally the effect of harmonic terminations on AlGaN/GaN power amplifiers (PA) performance at K-/Ka-band. Two technologies are compared, a 0.25 µm and 0.1 µm process. In both cases, a harmonic termination increases the
Publikováno v:
2020 94th ARFTG Microwave Measurement Symposium (ARFTG).
The development, modelling and characterization of millimeter-wave semiconductor devices calls for accurate and reproducible on-wafer measurements. We report on an interlaboratory study involving on-wafer S-parameter measurements in the 140 GHz to 22
Autor:
Rachid Driad, Agne Zukauskaite, Tim Christoph, Yuan Lu, Nicolas Kurz, Anli Ding, Oliver Ambacher, Roger Lozar, Lutz Kirste
Publikováno v:
2019 IEEE International Ultrasonics Symposium (IUS).
1 µm thick sputtered Al1-xScxN films were used to fabricate SAW resonators with 2-20 µm wavelength and the frequency response was measured in the range of 20 °C to 140 °C. Extracted phase velocity dispersion curve was in good agreement with the s
Autor:
Roger Lozar, Sandrine Wagner, Oliver Ambacher, Christian Friesicke, Maciej Cwiklinski, Hermann Mabler, Stefano Leone, Peter Brückner, Rudiger Quay
In this article, we present a set of gallium nitride (GaN) power amplifiers (PAs) that provide state-of-the-art performance within the D-band (110–170 GHz) and G-band (140–220 GHz) frequencies. A four-stage cascode PA operates with more than 25 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b0f9463dca00b4d9dd72fae6e28614c
https://publica.fraunhofer.de/handle/publica/261058
https://publica.fraunhofer.de/handle/publica/261058
This paper reports on initial results of a three-party on-wafer measurement comparison carried out on a custom-made alumina calibration substrate in the frequency range up to 110 GHz. The correction of the vector network analyzer measurement is done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecf63dd05f792464b846e9127584d411
Autor:
Rachid Driad, Nicolas Kurz, Vadim Lebedev, Anli Ding, Tim Christoph, Niclas M. Feil, Lutz Kirste, Agnė Žukauskaitė, Roger Lozar, Thomas Metzger, Yuan Lu, Oliver Ambacher
Publikováno v:
Applied Physics Letters. 116:101903
Non-polar a-plane Al0.77Sc0.23N 11 2 ¯ 0 thin films were prepared by magnetron sputter epitaxy on r-plane Al2O3 ( 1 1 ¯ 02 ) substrates. Different substrate off-cut angles were compared, and the off-cut angle of 3° resulted in the best structural
Autor:
Tim Christoph, Yuan Lu, Oliver Ambacher, Nicolas Kurz, Rachid Driad, Roger Lozar, Anli Ding, Agne Zukauskaite, Markus Reusch
Publikováno v:
2018 IEEE International Ultrasonics Symposium (IUS).
It has been found that introducing Sc into AIN to form Al 1-x Sc x N can lead to a significant increase in piezoelectric response, making Al 1-x Sc x N a promising material for electroacoustic devices, such as frequency filters for mobile communicati