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pro vyhledávání: '"Roger Le Dudal"'
Autor:
P. Rai‐Choudhury, Roger Le Dudal, J. M. Heddleson, S. R. Weinzierl, R. J. Hillard, R. G. Mazur
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:336
The precise control of ion implants for threshold voltage adjustment requires formation of ultra‐shallow electrically active carrier profiles, which begin at the Si–SiO2 interface. Obtaining accurate and precise carrier density profiles near the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57b835807a60b1518dd47d66c15abd8d
https://doi.org/10.1116/1.587121
https://doi.org/10.1116/1.587121
