Zobrazeno 1 - 10
of 181
pro vyhledávání: '"Roger J. Reeves"'
Publikováno v:
Applied Sciences, Vol 12, Iss 18, p 9382 (2022)
The efficiency and stability of perovskite solar cells (PSCs) depend not only on the perovskite film quality, but they are also influenced by the charge carriers of both the electron and hole transport layers (ETL and HTL). Doping of the carrier tran
Externí odkaz:
https://doaj.org/article/5346e1df255f42f3af3ed7ec344cd3c5
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3299 (2022)
Perovskite materials offer high-efficiency low-cost solar cells and applications versatility. We report on cesium-based hybrid perovskite solar cells with wavelength-selective properties ranging from 500 nm (UV-VIS) to 800 nm (IR). The band gap tunin
Externí odkaz:
https://doaj.org/article/e95ebe8089b84dae9c6ff4a05e0966a3
Autor:
Jonty I. Scott, Ryan L. Adams, Rodrigo F. Martinez‐Gazoni, Liam R. Carroll, Alison J. Downard, Tim D. Veal, Roger J. Reeves, Martin W. Allen
Publikováno v:
Small.
Publikováno v:
IEEE Transactions on Electron Devices. 68:1791-1797
$\beta $ -Ga2O3 is a candidate for high-efficiency power electronics and ultraviolet C (UVC) detectors capable of operating in harsh environments. However, electrical contacts that maintain their performance at high temperatures are likely to be impo
Autor:
Nancy Senabulya, Roy Clarke, James Mathis, Robert A. Makin, Krystal York, Steven M. Durbin, Roger J. Reeves
Publikováno v:
Journal of Electronic Materials. 50:2949-2955
MgSnN $$_2$$ thin films have been grown on yttria-stabilized zirconia substrates via plasma-assisted molecular beam epitaxy and analyzed using reflection high-energy electron diffraction, X-ray diffraction, optical transmission, and cathodoluminescen
Autor:
Martin W. Allen, Roger J. Reeves, Alison J. Downard, Alexandra R. McNeill, Rodrigo F. Martinez-Gazoni
Publikováno v:
ChemPhysChem.
ZnO is a strong candidate for transparent electronic devices due to its wide band gap and earth-abundance, yet its practical use is limited by its surface metallicity arising from a surface electron accumulation layer (SEAL). The SEAL forms by hydrox
Publikováno v:
IEEE Electron Device Letters. 40:1587-1590
High-temperature $\beta $ -Ga{2}O{3} Schottky diodes with very low leakage currents, capable of sensitive UVC detection at 350°C, were fabricated on $({\bar{2}}{01})$ -Ga2O3 single crystal substrates using intentionally-oxidized ruthenium (RuOx) Sch
Publikováno v:
IEEE Electron Device Letters. 40:337-340
Oxidized Ir, Pd, Pt, Ag, and Au Schottky contacts (SCs) were fabricated on (010) $\beta $ -Ga2O3 single crystal substrates via reactive RF sputtering using an O2: Ar plasma. The use of in situ oxidizing conditions resulted in SCs with very high recti
Autor:
Martin W. Allen, Alexandra R. McNeill, Joel C. Schuurman, Jonty I. Scott, Roger J. Reeves, Alison J. Downard, Rodrigo F. Martinez-Gazoni
Publikováno v:
Physical Chemistry Chemical Physics. 21:17913-17922
Tin(IV) dioxide (SnO2) is a technologically important transparent conducting oxide with high chemical stability. In air, the SnO2 surface is terminated with hydroxyl groups which cause the electronic bands to bend downward at the surface capturing a
Publikováno v:
Physical Review B. 102
We present an alternative perspective on semiconductor band-gap energies in terms of structural motifs, viewed through the lens of an Ising model as a means of quantifying the corresponding degree of lattice ordering. The validity of the model is dem