Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Roger J. Malik"'
Autor:
Paolo Lugli, Manfredo Manfredi, Claudio Canali, Aldo Di Carlo, G. Zandler, Andrea Neviani, Enrico Zanoni, Roger J. Malik
Publikováno v:
Semiconductor Science and Technology. 13:858-863
We present a detailed investigation of light emission phenomena connected with the presence of hot carriers in AlGaAs/GaAs heterojunction bipolar transistors. Electrons heated by the strong electric field at the base-collector junction lead to both i
Autor:
Timothy D. Harris, Rose Kopf, Y. Anand, L. C. Hopkins, W.D. Braddock, J. Nagle, Robert Hull, M. Geva, M. Micovic, Roger J. Malik, R. W. Ryan, J. M. Vandenberg
Publikováno v:
Journal of Crystal Growth. 127:686-689
Carbon-doped GaAs and Al x Ga 1-x As epilayers have been grown by solid source MBE using resistively heated, pyrolytic graphite filaments for the carbon source. These films were characterized by SIMS, Van der Pauw, X-ray diffraction, photoluminescenc
Publikováno v:
IEEE Electron Device Letters. 17:62-64
The metallurgical stability of ohmic contacts: Pt, Pt/Ti, Au/Ti, Au/Pt/Ti, and Au/Pt/Ti/W, on a 500 /spl Aring/ thick p/sup +/-InGaAs base of InP/InGaAs/InP HBTs have been investigated as a function of anneal temperature. All contacts were stable aft
Autor:
Miroslav Micovic, P.A. Evaldsson, P.R. Claisse, A. Lepore, P.A. Kiely, K.F. Brown-Goebeler, Geoffrey W. Taylor, Roger J. Malik, F.G. Storz, T. Vang, D.P. Docter
Publikováno v:
Electronics Letters. 30:529-531
The scaling to 0.5 µm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm = 205 mS/mm and VTH = –0.34 V have been obtained for 0.5 × 100 µm2 devices. For shorter gat
Publikováno v:
Applied Physics Letters. 64:411-413
Data are presented which demonstrate that very high quality carbon (C) doped epilayers for the fabrication of AlGaAs‐GaAs and AlGaAs‐GaAs‐InGaAs quantum well (QW) lasers can be grown by solid source molecular beam epitaxy (MBE) using a resistiv
Publikováno v:
IEEE Electron Device Letters. 13:557-559
Temperature-dependent measurements from 25 to 125 degrees C have been made of the DC I-V characteristics of HBTs with GaAs and In/sub 0.53/Ga/sub 0.47/As collector regions. It was found that the GaAs HBTs have very low output conductance and high col
Publikováno v:
Applied Physics Letters. 60:1327-1329
We have observed new misfit dislocation configurations and slip systems in (Al)GaAs/InxGa1−xAs/GaAs(100) heterostructures for x≥0.4. Dislocations are observed running along 〈001〉 directions in the interface, which are inconsistent with conven
Publikováno v:
Applied Physics Letters. 58:1375-1377
We report the first time‐resolved photoluminescence of photorefractive δ‐doped superlattices with picosecond resolution. The measurements were performed by the time‐correlated photon counting technique. The subband luminescence shows that even
Publikováno v:
Applied Physics Letters. 57:2449-2451
Carrier transport in asymmetric superlattice structures is investigated by a photoluminescence technique based on single photon counting. Hole drift times as short as 40 ps have been measured at room temperature in a compositionally graded AlGaAs sup
Publikováno v:
Applied Physics Letters. 57:626-628
We have performed the first picosecond time‐resolved measurements of the photorefractive and nonlinear absorptive properties of asymmetric GaAs doping superlattices. The lack of inversion symmetry in these structures results in a net photoinduced e