Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Roger J. Bleiler"'
Autor:
Roger J. Bleiler, Hui Chen, Scott Baumann, Jiarui Liu, Phillip E. Thompson, Wei-Kan Chu, Lin Shao, Xuemei Wang
Publikováno v:
Journal of Applied Physics. 92:5793-5797
We demonstrated that implantation of MeV Si ions into a Si substrate can suppress boride-enhanced diffusion (BED) normally associated with a high B concentration layer. In this study, a molecular-beam-epitaxy grown Si layer with a B concentration of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6851a74202e8e4ad15522433aacd5f98
https://doi.org/10.1063/1.1513207
https://doi.org/10.1063/1.1513207
Publikováno v:
Review of Scientific Instruments. 64:420-429
Both the standard resistive anode encoder (RAE) position sensitive ion detector and a new faster version have been adapted for use with CAMECA IMS‐3f/4f imaging secondary‐ion mass spectroscopy instruments. Each detector includes a dual microchann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db58021440a5d9df63c52568f8a34e3e
https://doi.org/10.1063/1.1144211
https://doi.org/10.1063/1.1144211
Publikováno v:
City University of Hong Kong
The long term reproducibility of quantitative secondary ion mass spectroscopy (SIMS) analysis is assessed using three independent analytical procedures important to the microelectronics industry: the determination of oxygen, boron, and surface impuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12cefdafd0a951aedd8db5e422eb6888
https://doi.org/10.1116/1.588530
https://doi.org/10.1116/1.588530
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:92
A number of years ago secondary ion mass spectrometry was proposed as a viable technique to determine the oxygen content in low resistivity (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c49f24aeeeafeca131aba0cb49dd214
https://doi.org/10.1116/1.586689
https://doi.org/10.1116/1.586689
Publikováno v:
MRS Proceedings. 59
Oxygen precipitation in CZ silicon is known to provide beneficial yield improvements in integrated circuit processing if the location and amount of precipitation can be properly controlled. The concentration of oxygen in the unprocessed silicon subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3548c5790e7bc992d9b5e9babb1962a
https://doi.org/10.1557/proc-59-73
https://doi.org/10.1557/proc-59-73
Publikováno v:
City University of Hong Kong
Microelectronic devices fabricated in silicon epitaxial layers on heavily doped substrates are less prone to latch-up and alpha-particle-induced soft errors. Unfortunately, trace amounts of boron in N + antimony-doped silicon substrates can cause del
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85bfcb6e2fb99c811185c58d460cb3c5
https://scholars.cityu.edu.hk/en/publications/determination-of-subparts-per-billion-boron-contamination-in-n-czochralski-silicon-substrates-by-sims(b32f52ff-fa29-4af8-b5c7-2e8eca95e19c).html
https://scholars.cityu.edu.hk/en/publications/determination-of-subparts-per-billion-boron-contamination-in-n-czochralski-silicon-substrates-by-sims(b32f52ff-fa29-4af8-b5c7-2e8eca95e19c).html
