Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Roger E. Nagle"'
Autor:
Anya Curran, Farzan Gity, Agnieszka Gocalinska, Enrica Mura, Roger E. Nagle, Michael Schmidt, Brendan Sheehan, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley
Publikováno v:
Crystals, Vol 11, Iss 11, p 1348 (2021)
In this paper, we report on the structural and electronic properties of polycrystalline gallium antimonide (poly-GaSb) films (50–250 nm) deposited on p+ Si/SiO2 by metalorganic vapour phase epitaxy at 475 °C. GaSb films grown on semi-insulating Ga
Externí odkaz:
https://doaj.org/article/e1a788fbc76d4c60a486dfc8daf77050
Autor:
Anya Curran, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, Colm O’Dwyer, Paul K. Hurley, Farzan Gity
Publikováno v:
Crystals, Vol 11, Iss 2, p 160 (2021)
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the fi
Externí odkaz:
https://doaj.org/article/b4687f6106c14ab2a814c4d1d2f9e4d7
Autor:
James C. Greer, James S. Clarke, Ananth P. Kaushik, Roger E. Nagle, Alfonso Sanchez-Soares, John J. Plombon, Sarah L. T. Jones
Density functional theory and density functional tight-binding are applied to model electron transport in copper nanowires of approximately 1 nm and 3 nm diameters with varying crystal orientation and surface termination. The copper nanowires studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7212337a0b07ae27aa7029426f43bac
https://hdl.handle.net/10468/3473
https://hdl.handle.net/10468/3473
Autor:
Peter L. D. Chang, Brian Corbett, Roger E. Nagle, Ibrahim Ban, Feras Eid, James O'Callaghan, William McFarlane, Mauro J. Kobrinsky, Ricky J. Tseng, Rawlings Brandon M, Michael R. Gleeson
Publikováno v:
OFC
Scopus-Elsevier
Scopus-Elsevier
High performance laser is integrated on Si substrates with evanescently coupled polymer waveguides. The design allows 2μm misalignment, consistent with CMOS assembly. 4μm gap and 8dB loss were demonstrated with improvement paths to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b48f892555c1fbae1d774dac4990b631
https://doi.org/10.1364/ofc.2014.th2a.41
https://doi.org/10.1364/ofc.2014.th2a.41