Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Roger E. DeWames"'
Autor:
Roger E. DeWames
Publikováno v:
Infrared Technology and Applications XLII.
In this paper we review the intrinsic and extrinsic technological properties of the incumbent technology, InP/In0.53Ga0.47As/InP, for imaging in the visible- short wavelength spectral band, InSb and HgCdTe for imaging in the mid-wavelength spectral b
Publikováno v:
SPIE Proceedings.
Low light level imaging applications requiring high detectivity demand photon shot noise limited performance at temperatures near 300K. Analytical models, however, have provided limited insight on underlying mechanisms limiting performance in convent
Publikováno v:
SPIE Proceedings.
Processing improvements have facilitated manufacturing reduced pixel dimensions for lattice-matched InGaAs on InP short-wave infrared detectors. Due to its technological maturity, this material system continues to garner attention for low-light level
Autor:
J. G. Pasko, M. Zandian, E. R. Gertner, Roger E. DeWames, Jasprit Singh, Jose M. Arias, Donald E. Cooper, S. H. Shin
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1025-1033
In this paper we report on p‐type arsenic doping of CdTe and HgTe/CdTe superlattices by photoassisted and conventional molecular‐beam epitaxy (MBE). We also report on some of the problems involved in doping and growing the HgTe/CdTe superlattice
Autor:
G. Hildebrandt, Mark Farris, Kadri Vural, Craig A. Cabelli, Jagmohan Bajaj, John G. Pasko, James D. Garnett, Donald E. Cooper, John T. Montroy, Majid Zandian, Michael Carmody, Roger E. DeWames, Donald N. B. Hall, Jose Arias, J. Chow
Publikováno v:
Scientific Detectors for Astronomy ISBN: 9781402017889
Low background applications place the most stringent requirements on detector material, requiring the lowest possible dark currents, highest quantum efficiencies, negligible image persistence (image latency or “ghosts”), high operability, and goo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d9210e6baaffabc288bcfaf8854f15b
https://doi.org/10.1007/1-4020-2527-0_8
https://doi.org/10.1007/1-4020-2527-0_8
Autor:
Arvind I. D'Souza, Larry C. Dawson, Stacy Marsh, Richard W. Willis, Priyalal S. Wijewarnasuriya, Roger E. DeWames, Jose M. Arias, Jagmohan Bajaj, Gernot Hildebrandt, Fergus E. Moore
Publikováno v:
Infrared Technology and Applications XXVII.
Publikováno v:
Applied Physics Letters. 60:3180-3182
Epitaxial YBa2Cu3O7−x(YBCO) films were grown on SrTiO3‐buffered (100) MgO substrates by pulsed laser deposition. The SrTiO3 layer of about 500 A thick serves a dual purpose to provide a better lattice match to the YBCO films as well as a diffusio
Autor:
Kadri Vural, R. G. Benz, Lester J. Kozlowski, A. Parikh, James R. Waterman, Scott M. Johnson, C. A. Cockrum, Art Simmons, J. D. Benson, M. J. Bevan, Owen K. Wu, K. A. Harris, Rajesh D. Rajavel, Christopher J. Summers, Jose M. Arias, G. M. Venzor, Steven R. Jost, John E. Jensen, Majid Zandian, H.-D. Shih, J. A. Dodge, Jagmohan Bajaj, Brent K. Wagner, G. S. Kamath, John H. Dinan, S. D. Pearson, Roger E. DeWames
Publikováno v:
SPIE Proceedings.
To achieve the DoD objective of low cost high performance infrared focal plane arrays a manufacturing technique is required which is intrinsically flexible with respect to device configuration and cutoff wavelength and easily scaleable with respect t
Autor:
John G. Pasko, Jose M. Arias, Roger E. DeWames, Lester J. Kozlowski, Jagmohan Bajaj, Majid Zandian, W. E. Tennant
Publikováno v:
SPIE Proceedings.
Extensive material and device statistics of performance and reproducibility are presented to show the maturity of this technology. The demonstration vehicles to monitor yields during this demonstration were long-wavelength infrared (LWIR) HgCdTe mult
Autor:
John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, Roger E. DeWames, Jagmohan Bajaj, W. E. Tennant
Publikováno v:
SPIE Proceedings.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out b