Zobrazeno 1 - 10
of 458
pro vyhledávání: '"Roger, Loo"'
Autor:
Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Yann Canvel, Nathali Franchina Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Mustafa Ayyad, Alex Merkulov, Gouri Sankar Kar, Sebastien Couet
Publikováno v:
IEEE Electron Device Letters. 44:614-617
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf7ee37c87f29632ccf8375605a4554
https://doi.org/10.1109/led.2023.3242302
https://doi.org/10.1109/led.2023.3242302
Autor:
Erik Rosseel, Clement Porret, Andriy Yakovitch Hikavyy, Roger Loo, Olivier Richard, Gerardo Tadeo Martinez, Dmitry Batuk, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi
Publikováno v:
ECS Transactions. 109:93-98
We report on selectively grown Si:P layers below 500°C targeting application in stacked nanosheet-based devices. In contrast to conventional approaches where selectivity is obtained at low temperatures using Cyclic-Deposition and Etch (CDE) with HCl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65525e80c3db28ce06daa486a21b87f9
https://doi.org/10.1149/10904.0093ecst
https://doi.org/10.1149/10904.0093ecst
Autor:
Philipp Hönicke, Yves Kayser, Victor Soltwisch, Andre Wählisch, Nils Wauschkuhn, Jeroen E. Scheerder, Claudia Fleischmann, Janusz Bogdanowicz, Anne-Laure Charley, Anabela Veloso, Roger Loo, Hans Mertens, Andriy Hikavyy, Thomas Siefke, Anna Andrle, Grzegorz Gwalt, Frank Siewert, Richard Ciesielski, Burkhard Beckhoff
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed1ba149d0a31c58d15e24225bc689f9
https://doi.org/10.1117/12.2657963
https://doi.org/10.1117/12.2657963
Autor:
Geoffrey Pourtois, Julien Ryckaert, Andriy Hikavyy, Alessio Spessot, Geert Eneman, Naoto Horiguchi, Philippe Matagne, Hiroaki Arimura, Roger Loo, An De Keersgieter, Paola Favia, Clement Porret, Anabela Veloso
Publikováno v:
IEEE Transactions on Electron Devices. 68:5380-5385
Stress simulations of Si0.5Ge0.5-channel nanowire transistors with typical 5 nm technology-node dimensions are performed to study the effect of layout on the channel stress generated by virtual substrates, by epitaxial mismatch from source/drain epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694d7b20ce41464793fc48ea71611d09
https://doi.org/10.1109/ted.2021.3076754
https://doi.org/10.1109/ted.2021.3076754
Autor:
Basoene Briggs, Roger Loo, Mustafa Ayyad, Manuel Mencarelli, Andriy Hikavyy, Clement Porret, Naoto Horiguchi, Robert Langer, Paola Favia
Publikováno v:
ECS Transactions. 104:139-146
This work reports on low temperature epitaxial growth solutions for the processing of advanced CMOS devices beyond the 3 nm technological node. The complex stacking of highly compositionally contrasted strained group IV materials is first demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a5001a4b87c213e0d6a74abc450b606
https://doi.org/10.1149/10404.0139ecst
https://doi.org/10.1149/10404.0139ecst
Autor:
Valérie Depauw, Clément Porret, Myriam Moelants, Emma Vecchio, Koen Kennes, Han Han, Roger Loo, Jinyoun Cho, Guillaume Courtois, Rufi Kurstjens, Kristof Dessein, Víctor Orejuela, Clara Sanchez‐Perez, Ignacio Rey‐Stolle, Iván García
Publikováno v:
Progress in Photovoltaics: Research and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9be0842ba1898852a992183f382a0792
https://doi.org/10.1002/pip.3634
https://doi.org/10.1002/pip.3634
Autor:
Jinyoun Cho, Clement Porret, Valerie Depauw, Guillaume Courtois, Daniel McDermott, Roger Loo, Kristof Dessein, Rufi Kurstjens
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e686d51c4a0a666cdc7f7f171624d90f
https://doi.org/10.1109/pvsc48317.2022.9938912
https://doi.org/10.1109/pvsc48317.2022.9938912
Autor:
Roger Loo, Hugo Bender, Eddy Simoen, Philippe Matagne, Andriy Hikavyy, E. Vancoille, Anabela Veloso, Adrian Chasin, Paola Favia, Erik Rosseel
Publikováno v:
ECS Transactions. 97:59-64
Introduction. The Gate-All-Around (GAA) Nanowire (NW) or nanosheet (NS) architecture provides superior short-channel effects control and is widely considered as one of the most promising candidates to replace finFETs in advanced Logic technology node
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf16242387d8e22702611e6d5e17af9e
https://doi.org/10.1149/09705.0059ecst
https://doi.org/10.1149/09705.0059ecst
Autor:
Jeroen De Coster, Ewoud Vissers, S. A. Srinivasan, Marianna Pantouvaki, Dries Van Thourhout, Hugo Bender, Roger Loo, Clement Porret, Paola Favia, Joris Van Campenhout
Publikováno v:
IEEE Journal of Quantum Electronics. 56:1-7
We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (~350 nm) Ge/SiGe quantum well stacks grown on Si. We demonstrate an absorption contrast $\Delta \alpha /\alpha $ of 2.1 at 1 Vpp swing in QCSE stacks grown on ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bb6bb398ee57a58e18dcbe1a4782d5f
https://doi.org/10.1109/jqe.2019.2949640
https://doi.org/10.1109/jqe.2019.2949640
Autor:
Clement Porret, Gianluca Rengo, Mustafa Ayyad, Andriy Hikavyy, Erik Rosseel, Robert Langer, Roger Loo
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1043
The peculiarities and physical properties of gallium-doped (Ge:Ga) and gallium and boron co-doped germanium (Ge:Ga:B) epilayers grown at low temperature (320 °C) by chemical vapor deposition, are investigated and benchmarked against their boron-dope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::279804b222564184f610eac57573ccfb
https://doi.org/10.35848/1347-4065/acb1b9
https://doi.org/10.35848/1347-4065/acb1b9