Structural, Microchemistry, and Hydrogenation Properties of TiMn0.4Fe0.2V0.4,TiMn0.1Fe0.2V0.7 and Ti0.4Zr0.6Mn0.4Fe0.2V0.4 Metal Hydrides

Autor: Koultoukis, E. D., Makridis, S. S., Röntzsch, L., Pavlidou, E., Ioannidou, A., Kikkinides, E. S., Stubos, A. K.

In this work, TiFe-based alloys have been developed according to the stoichiometry Ti1-xAxFe1-yBy (A \equiv Zr; B \equiv Mn, V). The hydrogen solubility properties have been investigated to develop dynamic hydrides of Ti-based alloys for hydrogen sto

Externí odkaz: http://arxiv.org/abs/1108.0108

Ion irradiation through SiO2/Si interfaces: Non-conventional fabrication of Si nanocrystals for memory applications

Autor: Schmidt, B., Heinig, K.-H., Röntzsch, L., Müller, T., Stegemann, K.-H., Votintseva, E.

Publikováno v: In Nuclear Inst. and Methods in Physics Research, B January 2006 242(1-2):146-148

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Self-aligned doubly-stacked Si dots fabrication for improved data retention of nanocrystal memories

Autor: Heinig, K.-H., Roentzsch, L.

Publikováno v: E-MRS IUMRS ICEM Spring Meeting 2006, Symposium "Silicon Nanocrystals for Electronic and Sensing Applications", 29.05.-02.06.2006, Nice, France

Nonvolatile nanocluster (NC) memories fabricated by Si ion implantation/irradiation of SiO2 gate oxides have some key parameters which are superior to those of state-of-the-art devices [1-3]. However, data retention is still below industrial requirem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::a5b2a69923b17cc835dd33bfb942ec2f
https://www.hzdr.de/publications/Publ-9283-1

Fabrication of Si nanocrystals for memory application by ion irradiation through SiO2/Si-interfaces

Autor: Schmidt, B., Heinig, K.-H., Roentzsch, L., Mücklich, A., Stegemann, K.-H., Votintseva, E., Klimenkov, M.

Publikováno v: Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Berlin, 04.03.-09.03.2005, 04.-09.03.2005, Berlin, Deutschland

This contribution addresses self-assembling of Si-nanocrystals (NCs) in gate oxides, with special emphasis on size and position tailoring and their application as discrete charge storage centers in nanocrystal memories. The Si NCs for these multi-dot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::7e98223561491cd257df0f01cdee3af3
https://www.hzdr.de/publications/Publ-7650-1