Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Roelof de Graaf"'
Autor:
Christophe Smeets, Guido Salmaso, Joe Carbone, Marcel Mastenbroek, Nico Benders, Roderik van Es, Roelof de Graaf
Publikováno v:
Optical and EUV Nanolithography XXXV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17509efb8af24bc7ba694922b79743a9
https://doi.org/10.1117/12.2614220
https://doi.org/10.1117/12.2614220
Autor:
Christophe Smeets, Roderik Van Es, Roelof De Graaf, Leon Levasier, Marcel Mastenbroek, Eric Verhoeven
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86a1da8933ef2128b5f92798d24f4355
https://doi.org/10.1117/12.2600961
https://doi.org/10.1117/12.2600961
Autor:
Arjan Holscher, Jeong-Heung Kong, Samah Khalek, Chansam Chang, Elliot Oti, Jong Hoon Jang, Hyunwoo Hwang, Roelof de Graaf, Young Ha Kim, Jeroen Cottaar, Young Seog Kang, Stefan Weichselbaum, Marcel Raas, Richard Droste, Ralf Gommers, YoungSun Nam, ByeongSoo Lee, Bram van Hoof, Jan van Kemenade, Maarten Voncken
Publikováno v:
SPIE Proceedings.
ASML’s 300mm scanner-systems are built on the TWINSCAN (XT/NXT) platform and yield high productivity levels for dry as well as immersion litho-scanners. NXT:1980Di immersion scanners yield productivity levels as high as 275wph while maintaining the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd4101e7bdff4656fcb0929b34448e7c
https://doi.org/10.1117/12.2259794
https://doi.org/10.1117/12.2259794
Autor:
Stefan Weichselbaum, Joris Jongen, Se-Yeon Jang, Jang Jonghoon, Young Ha Kim, Jeong-Heung Kong, Niek Verbeek, Richard Droste, Bart Dinand Paarhuis, Roelof de Graaf, Young Seog Kang, YoungSun Nam, Jeroen van der Wielen, Byeong Soo Lee, Hyunwoo Hwang, Marco Koert Stavenga, Barry Moest
Publikováno v:
SPIE Proceedings.
Scanners in High-Volume-Manufacturing conditions will experience a large range of reticles that vary in reticle transmission and reticle diffraction characteristics. Especially under full production loads reticles will heat up due to the exposure lig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d27292c310e482fe0c098f87a9c27a9a
https://doi.org/10.1117/12.2259792
https://doi.org/10.1117/12.2259792
Autor:
Young Ha Kim, Haico Victor Kok, Byeong Soo Lee, Jeongjin Lee, Christopher J. Mason, Richard Droste, Young Seog Kang, Igor Matheus Petronella Aarts, Roelof de Graaf, Wim de Boeij, Hyunwoo Hwang, Bart Dinand Paarhuis, Jeong Heung Kong, Stefan Weichselbaum
Publikováno v:
SPIE Proceedings.
Overlay is one of the key factors which enables optical lithography extension to 1X node DRAM manufacturing. It is natural that accurate wafer alignment is a prerequisite for good device overlay. However, alignment failures or misalignments are commo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee80f8c6c80425c6ff7fd047aa3ad941
https://doi.org/10.1117/12.2220587
https://doi.org/10.1117/12.2220587
Autor:
Matthew McLaren, Roelof de Graaf, Stefan Weichselbaum, Bert Koek, Richard Droste, Wim de Boeij
Publikováno v:
SPIE Proceedings.
Immersion scanners remain the critical lithography workhorses in semiconductor device manufacturing. When progressing towards the 7nm device node for logic and D18 device node for DRAM production, pattern-placement and layer-to-layer overlay requirem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20345c6751e8e015989dd801f21a91f9
https://doi.org/10.1117/12.2220589
https://doi.org/10.1117/12.2220589
Autor:
Wim de Boeij, Bart van Bussel, Young Ha Kim, Wim Bouman, Young Seog Kang, Roelof de Graaf, Jong Hoon Jang, AJ Arij Rijke, Chansam Chang, Richard Droste, Patrick Neefs, Jeong-Heung Kong, ByeongSoo Lee, Stefan Weichselbaum
Publikováno v:
SPIE Proceedings.
Adjustment and control of the illumination pupil asymmetry is relevant for wafer alignment and overlay of lithography tools. Pupil asymmetries can cause a tilt in aerial image (Aerial Image Tilt, or AIT). This AIT, combined with a focus offset, leads
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d2a62cbae2bb86c11f34fa3481aaf32
https://doi.org/10.1117/12.2220588
https://doi.org/10.1117/12.2220588
Autor:
Toine de Kort, Matthew McLaren, Wim de Boeij, Roelof de Graaf, Stefan Weichselbaum, Frank Bornebroek, Herman Botter, Rob van Ballegoij, Richard Droste
Publikováno v:
SPIE Proceedings.
Progressing towards the 10nm and 7nm imaging node, pattern-placement and layer-to-layer overlay requirements keep on scaling down and drives system improvements in immersion (ArFi) and dry (ArF/KrF) scanners. A series of module enhancements in the NX
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e6b430b2275a1c6c29ca7d9f7b837d6
https://doi.org/10.1117/12.2087112
https://doi.org/10.1117/12.2087112
Autor:
Roelof de Graaf, Alexander Viktorovych Padiy, Paul Christiaan Hinnen, Hans Van Der Laan, Jan Mulkens, Boris Menchtchikov, Michael Kubis
Publikováno v:
SPIE Proceedings.
Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7163072a08d1efac4b36c65d83f27f9
https://doi.org/10.1117/12.2011550
https://doi.org/10.1117/12.2011550
Autor:
Wim de Boeij, Par Broman, Marjan Leonardus Catharina Hoofman, Joost Smits, Jan-Jaap Kuit, Matthew McLaren, Roelof de Graaf, Haico Victor Kok, Martijn Leenders, Remi Pieternella, Igor Bouchoms
Publikováno v:
SPIE Proceedings.
In this paper we report on the performance enhancements on the NXT immersion scanner platform to support the immersion lithography roadmap. We particular discuss scanner modules that enable future overlay and focus requirements. Among others we descr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8a2839e86295ff8aad6eda7f752827
https://doi.org/10.1117/12.2021397
https://doi.org/10.1117/12.2021397