Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Roeland Baets"'
Autor:
J-M. Fedeli, L. Di Cioccio, Christian Seassal, Pedro Rojo Romeo, Roeland Baets, D. Van Thourhout, Philippe Regreny, J. Van Campenhout
Publikováno v:
Journal of Lightwave Technology. 26:52-63
We have performed a numerical study involving the design and optimization of InP-based microdisk lasers integrated on and coupled to a nanophotonic silicon-on-insulator (SOI) waveguide circuit, fabricated through bonding technology. The theoretical m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e51b4758d2f432018babe61e4c2320a4
https://doi.org/10.1109/jlt.2007.912107
https://doi.org/10.1109/jlt.2007.912107
Publikováno v:
Journal of Lightwave Technology. 26:257-275
Short-range parallel optical interconnect between integrated circuits can alleviate bandwidth, power, and packaging density issues that are associated with low-latency high-bandwidth input-output over electrical interconnect. In this paper, we evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2133bbb65e2a8ded927042633f68d128
https://doi.org/10.1109/jlt.2007.909849
https://doi.org/10.1109/jlt.2007.909849
Autor:
Pieter Neutens, Peter Bienstman, Vignesh Mukund, L. Lagae, P. Helin, P Deshpande, Tom Claes, Richard Stahl, B. Du Bois, P. Van Dorpe, Daan Martens, Roelof Jansen, Karolien Jans, W. Van Roy, A Stassen, Roeland Baets, S Severi, John O'Callaghan, Rita Vos, Ananth Subramanian, Andy Lambrechts, Dries Vercruysse, Xavier Rottenberg
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c6072ea1934d6f9e90c0a27da74274b
https://doi.org/10.7567/ssdm.2015.a-6-1
https://doi.org/10.7567/ssdm.2015.a-6-1
Autor:
S. Spiga, Paolo Cardile, G. Van Steenberge, J. Van Kerrebrouck, K. S. Kaur, Ananth Subramanian, R. Meyer, Rik Verplancke, Roeland Baets, Johan Bauwelinck
Publikováno v:
ECOC 2015 41ST EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION
Ghent University Academic Bibliography
Ghent University Academic Bibliography
We successfully demonstrate for the first time, VCSEL-to-silicon grating coupler flip-chip assembly using SU8 prism fabricated by non-uniform laser ablation. Excess loss of < 1 dB and data transmission up to 20 Gb/s @ 1550 nm was achieved.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e14ad48a022c73bf41d7c01024bff271
https://doi.org/10.1109/ecoc.2015.7341726
https://doi.org/10.1109/ecoc.2015.7341726
Publikováno v:
JOURNAL OF LIGHTWAVE TECHNOLOGY
We present and numerically analyze two schemes for efficient, large-bandwidth, and fabrication-tolerant optical coupling of bonded III-V membrane active components to an underlying nanophotonic waveguide circuit in silicon-on-insulator (SOI). Couplin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8765a6294cdf1a32041fee575dd0493a
https://doi.org/10.1109/jlt.2005.856231
https://doi.org/10.1109/jlt.2005.856231
Autor:
W. Van Roy, Samir Ghosh, Tetsuya Mizumoto, Roeland Baets, Gunther Roelkens, Shahram Keyvaninia, Yuya Shoji
Publikováno v:
IEEE PHOTONICS TECHNOLOGY LETTERS
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters
We demonstrate an optical isolator integrated with a silicon-on-insulator waveguide platform realized by the adhesive bonding of a Ce:YIG/SGGG die on top of a Mach-Zehnder interferometer (MZI). The design is based on the different nonreciprocal phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c75d792bcc434eec7f96898f315b959f
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100662495
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100662495
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 8:1399-1404
Dynamic birefringence of the linear optical amplifier (LOA) is theoretically and experimentally investigated. Significant nonlinear variations of the state of polarization with the input power and bias current of the LOA have been found. Based on thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6481a130f7e3365f7569fd65fa29f23
https://doi.org/10.1109/jstqe.2002.806694
https://doi.org/10.1109/jstqe.2002.806694
Autor:
A. De Groote, Martijn J. R. Heck, Roeland Baets, Gunther Roelkens, Michael L. Davenport, John E. Bowers, Jon D. Peters
Publikováno v:
OPTICS LETTERS
A broadband superluminescent III–V-on-silicon light-emitting diode (LED) was realized. To achieve the large bandwidth, quantum well intermixing and multiple die bonding of InP on a silicon photonic waveguide circuit were combined for the first time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31deb3d100434efc5a398eca499095ba
https://pubmed.ncbi.nlm.nih.gov/25121874
https://pubmed.ncbi.nlm.nih.gov/25121874
Autor:
Jon D. Peters, Martijn J. R. Heck, A. De Groote, Roeland Baets, Michael L. Davenport, John E. Bowers, Gunther Roelkens
Publikováno v:
IEEE Photonics Conference
Combining quantum well intermixing and multiple die bonding a broadband superluminescent III-V on silicon LED was realized. Balancing four LEDs with different band gaps resulted in 292nm 3dB bandwidth and an on-chip power of -8dBm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da6c3ff8ce9d47ab26a383956e849596
https://biblio.ugent.be/publication/5755204/file/5755222
https://biblio.ugent.be/publication/5755204/file/5755222
Autor:
Roeland Baets, Peter Bienstman
Publikováno v:
IEEE Journal of Quantum Electronics. 36:669-673
We present the concept of a novel resonant-cavity LED design where a symmetric resonant cavity (RC) is added to the outcoupling reflector. Because of the peculiar characteristics of the resulting mirror, these so-called RC/sup 2/LED's have a much hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef195c6712d14921d374f0da43aed73b
https://doi.org/10.1109/3.845721
https://doi.org/10.1109/3.845721