Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells

Autor: Bart Macco, Mike L. van de Poll, Bas W.H. van de Loo, Tim M.P. Broekema, Saravana B. Basuvalingam, Cristian A.A. van Helvoirt, Wilhelmus J.H. Berghuis, Roel J. Theeuwes, Nga Phung, Wilhelmus M.M. Kessels

Publikováno v: Solar Energy Materials and Solar Cells, 245:111869, 1122-1125. Elsevier

Recently, stacks consisting of an ultrathin SiO2 coated with atomic-layer-deposited (ALD) Al-doped zinc oxide (ZnO:Al) have been shown to yield state-of-the-art passivation of n-type crystalline silicon surfaces and provide low contact resistivities

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b750524728d6ec661eb0935b1e9f8161
https://doi.org/10.1016/j.solmat.2022.111869

POx/Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties

Autor: Bart Macco, Wilhelmus J. H. Berghuis, Jimmy Melskens, Wolfhard Beyer, Lachlan E. Black, Dibyashree Koushik, Wilhelmus M. M. Kessels, Roel J. Theeuwes

Publikováno v: ACS applied electronic materials 3(10), 4337-4347 (2021). doi:10.1021/acsaelm.1c00516
ACS Applied Electronic Materials, 3(10), 4337-4347. American Chemical Society
ACS Applied Electronic Materials

Phosphorus oxide (PO x ) capped by aluminum oxide (Al2O3) has recently been discovered to provide excellent surface passivation of crystalline silicon (c-Si). In this work, insights into the passivation mechanism of PO x /Al2O3 stacks are gained thro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58262df52e7dcdff21014dcd0be360e0
https://research.tue.nl/en/publications/fc38303c-27b6-4324-a715-5a7238ba5f3d

Extracting surface recombination parameters of germanium–dielectric interfaces by corona-lifetime experiments

Autor: Wilhelmus J. H. (Willem-Jan) Berghuis, Max Helmes, Jimmy Melskens, Roel J. Theeuwes, Wilhelmus M. M. (Erwin) Kessels, Bart Macco

Publikováno v: Journal of Applied Physics, 131(19):195301. American Institute of Physics

The interest in germanium (Ge) is rising for use in field-effect transistors, (space) photovoltaics, and silicon photonics. Suppressing and understanding carrier recombination at the Ge surface are vital for the performance of Ge in these application

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f37e78bbfe39691700a03fb28b614cc8
https://doi.org/10.1063/5.0091759

Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks

Autor: Wilhelmus J. H. Berghuis, Jimmy Melskens, Lachlan E. Black, Bart Macco, Marcel A. Verheijen, Wilhelmus M. M. Kessels, Roel J. Theeuwes

Publikováno v: Journal of Applied Physics, 130(13):135303. American Institute of Physics

Surface passivation of germanium is vital for optimal performance of Ge based optoelectronic devices especially considering their rapidlyincreasing surface-to-volume ratios. In this work, we have investigated the surface passivation of Ge by a stack

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8085d241aac510b5e42c947b28d7f79c
https://doi.org/10.1063/5.0064808