Zobrazeno 1 - 10
of 204
pro vyhledávání: '"Roel Gronheid"'
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ff342f68f684e9739b234933ccbd8bd
https://doi.org/10.1117/12.2658394
https://doi.org/10.1117/12.2658394
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ec97dd8f020da3eafe070fd74dbdade
https://doi.org/10.1117/12.2658042
https://doi.org/10.1117/12.2658042
Publikováno v:
Photomask Technology 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8740487c009cc56864fdd8e7fd4e129a
https://doi.org/10.1117/12.2642695
https://doi.org/10.1117/12.2642695
Autor:
Yoav Grauer, Andy Miller, Douglas Charles La Tulipe, Amnon Manassen, Shlomo Eisenbach, Ohad Bachar, Roel Gronheid
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0056f08b162a6e558f07055ec32055
https://doi.org/10.1117/12.2608319
https://doi.org/10.1117/12.2608319
Autor:
Prem Panneerchelvam, Chad Huard, Ankur Agarwal, Alessandro Vaglio Pret, Antonio Mani, Roel Gronheid, Marc Demand, Kaushik Kumar
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e0def3674b5c5bcb7a2b7a0642f45c
https://doi.org/10.1117/12.2614095
https://doi.org/10.1117/12.2614095
Autor:
Prem Panneerchelvam, Ankur Agarwal, Chad M. Huard, Alessandro Vaglio Pret, Antonio Mani, Roel Gronheid, Marc Demand, Kaushik Kumar, Sara Paolillo, Frederic Lazzarino
Publikováno v:
Journal of Vacuum Science & Technology B. 40:062601
Quantitatively accurate, physics-based, computational modeling of etching and lithography processes is essential for modern semiconductor manufacturing. This paper presents lithography and etch models for a trilayer process in a back end of the line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3de34cf34076288e2ffb986dcf6a3ade
https://doi.org/10.1116/6.0002059
https://doi.org/10.1116/6.0002059
Autor:
Paulina Rincon Delgadillo, Paul F. Nealey, Zhang Jiang, Roel Gronheid, Xuanxuan Chen, Gordon S. W. Craig
Publikováno v:
Macromolecules. 52:7798-7805
We investigate directed self-assembly (DSA), with 3× density multiplication, of symmetric polystyrene-block-poly(methyl methacrylate) (L0 = 28 nm) with increasing film thicknesses and reveal a thic...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a281787c9c7392ab86d0169f9e0b2371
https://doi.org/10.1021/acs.macromol.9b01030
https://doi.org/10.1021/acs.macromol.9b01030
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Overlay (OVL) has become a critical process control and metrology challenge for current and future process nodes of logic as well as memory devices. Especially with the advent of EUV lithography and the accompanying use of two lithographical techniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::204e164d7231796245149f4d8d8df48f
https://doi.org/10.1117/12.2584554
https://doi.org/10.1117/12.2584554
Autor:
Katya Gordon, Hedvi Spielberg, Diana Shaphirov, Xiaolei Liu, Eltsafon Ashwal, Eitan Hajaj, Philippe Leray, Mark Ghinovker, Chen Dror, Raviv Yohanan, Zephyr Liu, Dieter Van den Heuvel, Roel Gronheid
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
As design nodes of advanced semiconductor chips shrink, reduction in on-product overlay (OPO) budget becomes more critical to achieving higher yield. Imaging-based overlay (IBO) targets usually consist of periodic patterns where their pitches are res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a71df7b888ddfb6580f81ecc9e7b9d1
https://doi.org/10.1117/12.2585876
https://doi.org/10.1117/12.2585876
Autor:
Slawomir Czerkas, Ulrich Pohlmann, Richard Wang, Yoram Uziel, Nadav Gutman, Roel Gronheid, Yoel Feler, Frank Laske, Moran Zaberchik, Evgeni Gurevich, Yoav Grauer, Henning Stoschus
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
We show that an overlay (OVL) metrology system based on a scanning electron microscope can achieve accurate registration of buried and resist (top) structures. The positions were determined by both Back Scattered Electrons (BSE) and Secondary Electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8f20ec87bdb551f74e4744aa78fea2
https://doi.org/10.1117/12.2583710
https://doi.org/10.1117/12.2583710