Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Roel Daamen"'
Autor:
Zhichao Tan, Aurelie Humbert, Youngcheol Chae, Roel Daamen, Youri Victorovitch Ponomarev, Michiel A. P. Pertijs
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:2469-2477
This paper presents a fully integrated CMOS humidity sensor for a smart RFID sensor platform. The sensing element is a CMOS-compatible capacitive humidity sensor, which consists of top-metal finger-structure electrodes covered by a humidity-sensitive
Autor:
Youssef Travaly, O. Richard, E. VanBesien, Gerald Beyer, Romano Hoofman, Roel Daamen, Marianna Pantouvaki, Henny Volders, M. Willegems, Elisabeth Camerotto, Aurelie Humbert, Kristof Kellens
Publikováno v:
Microelectronic Engineering. 85:2071-2074
A sacrificial material deposited by CVD is used to demonstrate air gap formation in single damascene structures by UV-assisted decomposition. The material is removed through a porous low-k cap, after completion of the damascene scheme. The porosity o
Autor:
V.H. Nguyen, Romano Hoofman, Roel Daamen, G. J. A. M. Verheijden, Pascal Bancken, Aurelie Humbert
Publikováno v:
Microelectronic Engineering. 84:2177-2183
Advanced copper interconnects need porous low-k materials to obtain low interline capacitances. A number of porous low-k integration issues have however delayed the introduction of these fragile dielectrics. Replacing the porous low-k dielectric by a
Autor:
Alexis Farcy, D. Bouchu, F. Gaillard, Romano Hoofman, L.G. Gosset, Joaquim Torres, Pascal Bancken, V. Nguyen Hoang, Greja Johanna Adriana Maria Verheijden, J. Michelon, T. Vandeweyer, Ph. Lyan, Roel Daamen, J. de Pontcharra, Vincent Arnal
Publikováno v:
Microelectronic Engineering. 82:321-332
The integration of air gaps for advanced Cu interconnects is mandatory to achieve the performances required for high performance integrated circuits (ICs). The interest of their introduction as a function of the chosen architecture, i.e. hybrid (i.e.
Publikováno v:
Microelectronic Engineering. 76:95-99
The planarization efficiency of four different copper CMP processes was studied and compared. All processes under consideration were tuned to have the same removal rate of 300 nm/min on a blanket copper wafer. In this way, the planarization efficienc
Publikováno v:
Journal of the Electrochemical Society, 150(11), G689-G693. The Electrochemical Society Inc.
A physically based model for dishing during metal chemical mechanical polishing (CMP) is presented. The control of dishing is important for advanced damascene metal interconnect technologies. However, the modeling of dishing is still in an initial ph
Autor:
Youri Victorovitch Ponomarev, Youngcheol Chae, Aurelie Humbert, Zhichao Tan, Michiel A. P. Pertijs, Roel Daamen
Publikováno v:
VLSIC
A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16µm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capa
Autor:
Roel Daamen, Youngcheol Chae, Aurelie Humbert, Kamran Souri, Youri Victorovitch Ponomarev, Michiel A. P. Pertijs, Zhichao Tan
Publikováno v:
A-SSCC
A fully-integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16μm standard CMOS technology. It consists of a top-metal finger-structure capacitor covered with a humidity-sensitive layer, combined with a micro-power flex
Autor:
Romano Hoofman, L. Chen, Aurelie Humbert, Pascal Bancken, J.K. Cheng, A. Yang, T. Martens, J. Waeterloos, D. Emur Badaroglu, V.H. Nguyen, J. Michelon, Roel Daamen, G. J. A. M. Verheijden
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
In this work, we propose and verify a robust dual damascene air gap architecture, which avoids the increasing complexity and cost normally associated with current multilevel air gap integration. Air gap packaging reliability was also addressed showin
Autor:
F. Gaillard, J. Torres, G. Imbert, V. Girault, Lucile Arnaud, Roel Daamen, Vincent Jousseaume, Zvonimir Gabric, Gérard Passemard, Romano Hoofman, L.G. Gosset, J. Mitard, Vincent Arnal, M. Assous, C. Guedj, Werner Pamler, Andreas Stich, A. Toffoli, Laurent Favennec, D. Bouchu
Publikováno v:
2006 International Interconnect Technology Conference.
The spectral photoresponse of advanced interconnects is potentially interesting for the precise characterization of advanced interconnects, using standard comb test structures under illumination. This electro-optical method provides detailed informat