Zobrazeno 1 - 10
of 176
pro vyhledávání: '"Rodwell, Mark J. W."'
Autor:
Skrimponis, Panagiotis, Kang, Seongjoon, Khalili, Abbas, Lee, Wonho, Hosseinzadeh, Navid, Mezzavilla, Marco, Erkip, Elza, Rodwell, Mark J. W., Buckwalter, James F., Rangan, Sundeep
Power consumption is a key challenge in millimeter wave (mmWave) receiver front-ends, due to the need to support high dimensional antenna arrays at wide bandwidths. Recently, there has been considerable work in developing low-power front-ends, often
Externí odkaz:
http://arxiv.org/abs/2201.00229
Millimeter wave MIMO combines the benefits of compact antenna arrays with a large number of elements and massive bandwidths, so that fully digital beamforming has the potential of supporting a large number of simultaneous users with {\it per user} da
Externí odkaz:
http://arxiv.org/abs/1912.11643
Akademický článek
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Autor:
Lee, Joon Sue, Choi, Sukgeun, Pendharkar, Mihir, Pennachio, Dan J., Markman, Brian, Seas, Micheal, Koelling, Sebastian, Verheijen, Marcel A., Casparis, Lucas, Petersson, Karl D., Petkovic, Ivana, Schaller, Vanessa, Rodwell, Mark J. W., Marcus, Charles M., Krogstrup, Peter, Kouwenhoven, Leo P., Bakkers, Erik P. A. M., Palmstrøm, Chris J.
Publikováno v:
Phys. Rev. Materials 3, 084606 (2019)
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconduc
Externí odkaz:
http://arxiv.org/abs/1808.04563
Autor:
Huang, Jun Z., Long, Pengyu, Povolotskyi, Michael, Ilatikhameneh, Hesameddin, Ameen, Tarek, Rahman, Rajib, Rodwell, Mark J. W., Klimeck, Gerhard
Publikováno v:
IEEE Transactions on Electron Devices, 2017
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have both shorter tunneling distance and two transmission resonances that sig
Externí odkaz:
http://arxiv.org/abs/1701.00480
Akademický článek
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Autor:
Long, Pengyu, Huang, Jun, Jiang, Zhengping, Klimeck, Gerhard, Rodwell, Mark J. W., Povolotskyi, Michael
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source suggest t
Externí odkaz:
http://arxiv.org/abs/1609.07203
Publikováno v:
IEEE Transactions on Electron Devices, 2016
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$). However, at short channel
Externí odkaz:
http://arxiv.org/abs/1607.04896
Publikováno v:
IEEE Journal of the Electron Devices Society, vol. 4, no. 6, Nov. 2016
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly shorten the tunnel distance and create two resona
Externí odkaz:
http://arxiv.org/abs/1605.07166
Autor:
Wistey, Mark A., Baraskar, Ashish K., Singisetti, Uttam, Burek, Greg J., Shin, Byungha, Kim, Eunji, McIntyre, Paul C., Gossard, Arthur C., Rodwell, Mark J. W.
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features. Molecular beam epitaxy (MBE) near SiO2 or SiNx led to gaps,
Externí odkaz:
http://arxiv.org/abs/1408.3714