Boron-doped graphene topological defects: unveiling high sensitivity to NO molecule for gas sensing applications.

Autor: Rao BK; Department of Applied Physics, Shri Shankaracharya Technical Campus, Junwani, Bhilai, Chhattisgarh, India., Cabral TLG; Departamento de Física, ICEx, Universidade Federal Fluminense - UFF, Volta Redonda/RJ, Brazil. rgamorim@id.uff.br., Rodrigues DCM; Instituto de Física, Universidade Federal Fluminense, Niterói/RJ, Brazil., de Souza FAL; Departamento de Física, Federal Institute of Education, Science and Technology of Espírito Santo, Ibatiba/ES, Brazil., Scopel WL; Departamento de Física, Universidade Federal do Espírito Santo- UFES, Vitória/ES, Brazil., Amorim RG; Departamento de Física, ICEx, Universidade Federal Fluminense - UFF, Volta Redonda/RJ, Brazil. rgamorim@id.uff.br., Pandey R; Department of Physics, Michigan Technological University, MTU, Houghton/MI, USA.

Publikováno v: Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2024 Jan 31; Vol. 26 (5), pp. 4466-4473. Date of Electronic Publication: 2024 Jan 31.