Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Rodrigo M. Gazoni"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:1791-1797
$\beta $ -Ga2O3 is a candidate for high-efficiency power electronics and ultraviolet C (UVC) detectors capable of operating in harsh environments. However, electrical contacts that maintain their performance at high temperatures are likely to be impo
Publikováno v:
IEEE Electron Device Letters. 40:1587-1590
High-temperature $\beta $ -Ga{2}O{3} Schottky diodes with very low leakage currents, capable of sensitive UVC detection at 350°C, were fabricated on $({\bar{2}}{01})$ -Ga2O3 single crystal substrates using intentionally-oxidized ruthenium (RuOx) Sch
Publikováno v:
IEEE Electron Device Letters. 40:337-340
Oxidized Ir, Pd, Pt, Ag, and Au Schottky contacts (SCs) were fabricated on (010) $\beta $ -Ga2O3 single crystal substrates via reactive RF sputtering using an O2: Ar plasma. The use of in situ oxidizing conditions resulted in SCs with very high recti
Autor:
Martin W. Allen, L. Carroll, Alison J. Downard, D. A. Evans, Roger J. Reeves, S. Astley, Jonty I. Scott, Rodrigo M. Gazoni
Publikováno v:
Physical Review B. 102
Synchrotron x-ray photoelectron spectroscopy was used to explore the relationship between the hydroxyl termination and band bending at the $(\overline{2}01)$ surface of $\ensuremath{\beta}\text{\ensuremath{-}}\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3
Autor:
Alison J. Downard, Rodrigo M. Gazoni, Martin W. Allen, Roger J. Reeves, Kalib J. Bell, Adam R. Hyndman, Alexandra R. McNeill
Publikováno v:
The Journal of Physical Chemistry C. 122:12681-12693
ZnO is a member of a small class of semiconductors that includes In2O3, SnO2, CdO, and InN, whose surfaces are highly unusual because their electronic bands bend downward to form a quantized potential well in which a two-dimensional electron gas is c
Publikováno v:
IEEE Transactions on Electron Devices. 64:5194-5201
Nature inspired neuromorphic architectures are being explored as an alternative to imminent limitations of conventional complementary metal-oxide semiconductor (CMOS) architectures. Utilization of such architectures for practical applications like ad
Autor:
Rodrigo M. Gazoni, Galo J. A. A. Soler-Illia, Martín G. Bellino, M. Cecilia Fuertes, María Luz Martínez Ricci, Gustavo Giménez
Publikováno v:
Journal of Materials Chemistry C. 5:3445-3455
In this work we present the designed production of a highly tunable nanocomposite able to confine and enhance the electromagnetic field through the combined effects of photonic and plasmonic responses. Silver nanoparticles (NPs) were embedded within
Autor:
Robert A. Makin, Steven M. Durbin, Rodrigo M. Gazoni, Martin W. Allen, Caixia Hou, Roger J. Reeves, Krystal York
Publikováno v:
Applied Physics Letters. 117:203502
Very high temperature operation β-Ga2O3 Schottky contacts were fabricated on moderately doped 2 ¯ 01 β-Ga2O3 single crystal substrates using four different types of intentionally oxidized platinum group metal (PGM) Schottky contacts (SCs), i.e., P
Autor:
Roger J. Reeves, Krystal York, Martin W. Allen, Caixia Hou, Rodrigo M. Gazoni, Jonty I. Scott, Steven M. Durbin, Robert A. Makin
Publikováno v:
Applied Physics Letters. 114:233503
Oxidized iridium (IrOx) Schottky contacts (SCs) with excellent high temperature stability were fabricated on 2 ¯ 01 β-Ga2O3 single crystal substrates. These IrOx:β-Ga2O3 SCs were operated at temperatures from 24 to 350 °C with only a very small i
Publikováno v:
Applied Physics Letters. 114:033502
High quality Ru, Ir, Pd, Pt, Ag, and Au Schottky contacts (SCs) were fabricated on 2 ¯ 01 β-Ga2O3 single crystal substrates via rf sputtering under inert and oxidizing plasma conditions. The oxidized SCs exhibited significantly higher rectifying ba